Band-edge diagrams for strained III-V semiconductor quantum wells, wires, and dots
(2005) In Physical Review B (Condensed Matter and Materials Physics) 72(20).- Abstract
- We have calculated band-edge energies for most combinations of zinc blende AlN, GaN, InN, GaP, GaAs, InP, InAs, GaSb, and InSb in which one material is strained to the other. Calculations were done for three different geometries (quantum wells, wires, and dots) and mean effective masses were computed in order to estimate confinement energies. For quantum wells, we have also calculated band-edges for ternary alloys. Energy gaps, including confinement, may be easily and accurately estimated using band energies and a simple effective mass approximation, yielding excellent agreement with experimental results. By calculating all material combinations we have identified interesting material combinations, such as artificial donors, that have not... (More)
- We have calculated band-edge energies for most combinations of zinc blende AlN, GaN, InN, GaP, GaAs, InP, InAs, GaSb, and InSb in which one material is strained to the other. Calculations were done for three different geometries (quantum wells, wires, and dots) and mean effective masses were computed in order to estimate confinement energies. For quantum wells, we have also calculated band-edges for ternary alloys. Energy gaps, including confinement, may be easily and accurately estimated using band energies and a simple effective mass approximation, yielding excellent agreement with experimental results. By calculating all material combinations we have identified interesting material combinations, such as artificial donors, that have not been experimentally realized. The calculations were perfomed using strain-dependent k center dot p theory and provide a comprehensive overview of band structures for strained heterostructures. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/910231
- author
- Pryor, CE and Pistol, Mats-Erik LU
- organization
- publishing date
- 2005
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Physical Review B (Condensed Matter and Materials Physics)
- volume
- 72
- issue
- 20
- article number
- 205311
- publisher
- American Physical Society
- external identifiers
-
- wos:000233603900064
- scopus:29744466652
- ISSN
- 1098-0121
- DOI
- 10.1103/PhysRevB.72.205311
- language
- English
- LU publication?
- yes
- id
- 9bffebfe-0d61-4274-9725-01cf996a4d36 (old id 910231)
- date added to LUP
- 2016-04-01 17:09:56
- date last changed
- 2022-03-31 11:07:14
@article{9bffebfe-0d61-4274-9725-01cf996a4d36,
abstract = {{We have calculated band-edge energies for most combinations of zinc blende AlN, GaN, InN, GaP, GaAs, InP, InAs, GaSb, and InSb in which one material is strained to the other. Calculations were done for three different geometries (quantum wells, wires, and dots) and mean effective masses were computed in order to estimate confinement energies. For quantum wells, we have also calculated band-edges for ternary alloys. Energy gaps, including confinement, may be easily and accurately estimated using band energies and a simple effective mass approximation, yielding excellent agreement with experimental results. By calculating all material combinations we have identified interesting material combinations, such as artificial donors, that have not been experimentally realized. The calculations were perfomed using strain-dependent k center dot p theory and provide a comprehensive overview of band structures for strained heterostructures.}},
author = {{Pryor, CE and Pistol, Mats-Erik}},
issn = {{1098-0121}},
language = {{eng}},
number = {{20}},
publisher = {{American Physical Society}},
series = {{Physical Review B (Condensed Matter and Materials Physics)}},
title = {{Band-edge diagrams for strained III-V semiconductor quantum wells, wires, and dots}},
url = {{http://dx.doi.org/10.1103/PhysRevB.72.205311}},
doi = {{10.1103/PhysRevB.72.205311}},
volume = {{72}},
year = {{2005}},
}