Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates : challenges and prospects for integration of III-Vs on Si
(2016) In Nanotechnology 27(45). p.455601-455601- Abstract
Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates. Herein, we report on the challenges and prospects of molecular beam epitaxy of InAs nanowires in SiO2/Si nanotube templates. We show how and under which conditions the nanowire growth is initiated by In-assisted vapor-liquid-solid growth enabled by the local conditions inside the nanotube template. The conditions for high yield of vertical nanowires are investigated in terms of the nanotube depth, diameter and V/III flux ratios. We present a model that further substantiates our findings. This work opens new perspectives for monolithic integration of... (More)
Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates. Herein, we report on the challenges and prospects of molecular beam epitaxy of InAs nanowires in SiO2/Si nanotube templates. We show how and under which conditions the nanowire growth is initiated by In-assisted vapor-liquid-solid growth enabled by the local conditions inside the nanotube template. The conditions for high yield of vertical nanowires are investigated in terms of the nanotube depth, diameter and V/III flux ratios. We present a model that further substantiates our findings. This work opens new perspectives for monolithic integration of III-Vs on the silicon platform enabling new applications in the electronics, optoelectronics and energy harvesting arena.
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- author
- Vukajlovic-Plestina, Jelena ; Dubrovskii, Vladimir G ; Tütüncuoǧlu, Gözde ; Potts, Heidi LU ; Ricca, Ruben ; Meyer, Frank ; Matteini, Federico ; Leran, Jean-Baptiste and I Morral, Anna Fontcuberta
- publishing date
- 2016-11-11
- type
- Contribution to journal
- publication status
- published
- in
- Nanotechnology
- volume
- 27
- issue
- 45
- pages
- 455601 - 455601
- publisher
- IOP Publishing
- external identifiers
-
- scopus:84991669585
- pmid:27698287
- ISSN
- 0957-4484
- DOI
- 10.1088/0957-4484/27/45/455601
- language
- English
- LU publication?
- no
- id
- a5b45989-60df-4686-bccf-c628f94be2dc
- date added to LUP
- 2019-05-15 09:53:03
- date last changed
- 2024-06-11 11:16:21
@article{a5b45989-60df-4686-bccf-c628f94be2dc, abstract = {{<p>Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates. Herein, we report on the challenges and prospects of molecular beam epitaxy of InAs nanowires in SiO2/Si nanotube templates. We show how and under which conditions the nanowire growth is initiated by In-assisted vapor-liquid-solid growth enabled by the local conditions inside the nanotube template. The conditions for high yield of vertical nanowires are investigated in terms of the nanotube depth, diameter and V/III flux ratios. We present a model that further substantiates our findings. This work opens new perspectives for monolithic integration of III-Vs on the silicon platform enabling new applications in the electronics, optoelectronics and energy harvesting arena.</p>}}, author = {{Vukajlovic-Plestina, Jelena and Dubrovskii, Vladimir G and Tütüncuoǧlu, Gözde and Potts, Heidi and Ricca, Ruben and Meyer, Frank and Matteini, Federico and Leran, Jean-Baptiste and I Morral, Anna Fontcuberta}}, issn = {{0957-4484}}, language = {{eng}}, month = {{11}}, number = {{45}}, pages = {{455601--455601}}, publisher = {{IOP Publishing}}, series = {{Nanotechnology}}, title = {{Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates : challenges and prospects for integration of III-Vs on Si}}, url = {{http://dx.doi.org/10.1088/0957-4484/27/45/455601}}, doi = {{10.1088/0957-4484/27/45/455601}}, volume = {{27}}, year = {{2016}}, }