Electronic structures of [1 1 1]-oriented free-standing InAs and InP nanowires
(2016) In Journal of Physics: Condensed Matter 28(13).- Abstract
We report on a theoretical study of the electronic structures of the [1 1 1]-oriented, freestanding, zincblende InAs and InP nanowires with hexagonal cross sections by means of an atomistic sp3s∗, spinorbit interaction included, nearest-neighbor, tight-binding method. The band structures and the band state wave functions of these nanowires are calculated and the symmetry properties of the bands and band states are analyzed based on the C3v double point group. It is shown that all bands of these nanowires are doubly degenerate at the γ-point and some of these bands will split into non-degenerate bands when the wave vector k moves away from the γ-point as a manifestation of spin-splitting due to spinorbit... (More)
We report on a theoretical study of the electronic structures of the [1 1 1]-oriented, freestanding, zincblende InAs and InP nanowires with hexagonal cross sections by means of an atomistic sp3s∗, spinorbit interaction included, nearest-neighbor, tight-binding method. The band structures and the band state wave functions of these nanowires are calculated and the symmetry properties of the bands and band states are analyzed based on the C3v double point group. It is shown that all bands of these nanowires are doubly degenerate at the γ-point and some of these bands will split into non-degenerate bands when the wave vector k moves away from the γ-point as a manifestation of spin-splitting due to spinorbit interaction. It is also shown that the lower conduction bands of these nanowires all show simple parabolic dispersion relations, while the top valence bands show complex dispersion relations and band crossings. The band state wave functions are presented by the spatial probability distributions and it is found that all the band states show 2π/3-rotation symmetric probability distributions. The effects of quantum confinement on the band structures of the [1 1 1]-oriented InAs and InP nanowires are also examined and an empirical formula for the description of quantization energies of the lowest conduction band and the highest valence band is presented. The formula can simply be used to estimate the enhancement of the band gaps of the nanowires at different sizes as a result of quantum confinement.
(Less)
- author
- Liao, Gaohua ; Luo, Ning ; Chen, Ke Qiu and Xu, H. Q. LU
- organization
- publishing date
- 2016-03-07
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- band structure, InAs, InP, semiconductor nanowire, spin-orbit interaction, tight-binding method
- in
- Journal of Physics: Condensed Matter
- volume
- 28
- issue
- 13
- article number
- 135303
- publisher
- IOP Publishing
- external identifiers
-
- pmid:26951953
- wos:000371905200019
- scopus:84960418501
- ISSN
- 0953-8984
- DOI
- 10.1088/0953-8984/28/13/135303
- language
- English
- LU publication?
- yes
- id
- c373ef18-3d65-45c5-8f27-6f171fcaa264
- date added to LUP
- 2016-07-11 14:36:21
- date last changed
- 2024-01-04 09:50:20
@article{c373ef18-3d65-45c5-8f27-6f171fcaa264,
abstract = {{<p>We report on a theoretical study of the electronic structures of the [1 1 1]-oriented, freestanding, zincblende InAs and InP nanowires with hexagonal cross sections by means of an atomistic sp<sup>3</sup>s<sup>∗</sup>, spinorbit interaction included, nearest-neighbor, tight-binding method. The band structures and the band state wave functions of these nanowires are calculated and the symmetry properties of the bands and band states are analyzed based on the C<sub>3v</sub> double point group. It is shown that all bands of these nanowires are doubly degenerate at the γ-point and some of these bands will split into non-degenerate bands when the wave vector k moves away from the γ-point as a manifestation of spin-splitting due to spinorbit interaction. It is also shown that the lower conduction bands of these nanowires all show simple parabolic dispersion relations, while the top valence bands show complex dispersion relations and band crossings. The band state wave functions are presented by the spatial probability distributions and it is found that all the band states show 2π/3-rotation symmetric probability distributions. The effects of quantum confinement on the band structures of the [1 1 1]-oriented InAs and InP nanowires are also examined and an empirical formula for the description of quantization energies of the lowest conduction band and the highest valence band is presented. The formula can simply be used to estimate the enhancement of the band gaps of the nanowires at different sizes as a result of quantum confinement.</p>}},
author = {{Liao, Gaohua and Luo, Ning and Chen, Ke Qiu and Xu, H. Q.}},
issn = {{0953-8984}},
keywords = {{band structure; InAs; InP; semiconductor nanowire; spin-orbit interaction; tight-binding method}},
language = {{eng}},
month = {{03}},
number = {{13}},
publisher = {{IOP Publishing}},
series = {{Journal of Physics: Condensed Matter}},
title = {{Electronic structures of [1 1 1]-oriented free-standing InAs and InP nanowires}},
url = {{http://dx.doi.org/10.1088/0953-8984/28/13/135303}},
doi = {{10.1088/0953-8984/28/13/135303}},
volume = {{28}},
year = {{2016}},
}