Structure reinvestigation of α-, β- And γ-In2S3
(2016) In Acta Crystallographica. Section B: Structural Science, Crystal Engineering and Materials 72. p.410-415- Abstract
Semiconducting indium sulfide (In2S3) has recently attracted considerable attention as a buffer material in the field of thin film photovoltaics. Compared with this growing interest, however, detailed characterizations of the crystal structure of this material are rather scarce and controversial. In order to close this gap, we have carried out a reinvestigation of the crystal structure of this material with an in situ X-ray diffraction study as a function of temperature using monochromatic synchrotron radiation. For the purpose of this study, high quality polycrystalline In2S3 material with nominally stoichiometric composition was synthesized at high temperatures. We found three modifications... (More)
Semiconducting indium sulfide (In2S3) has recently attracted considerable attention as a buffer material in the field of thin film photovoltaics. Compared with this growing interest, however, detailed characterizations of the crystal structure of this material are rather scarce and controversial. In order to close this gap, we have carried out a reinvestigation of the crystal structure of this material with an in situ X-ray diffraction study as a function of temperature using monochromatic synchrotron radiation. For the purpose of this study, high quality polycrystalline In2S3 material with nominally stoichiometric composition was synthesized at high temperatures. We found three modifications of In2S3 in the temperature range between 300 and 1300 K, with structural phase transitions at temperatures of 717 K and above 1049 K. By Rietveld refinement we extracted the crystal structure data and the temperature coefficients of the lattice constants for all three phases, including a high-temperature trigonal γ-In2S3 modification.
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- author
- Pistor, Paul ; Merino Álvarez, Jose M. ; León, Máximo ; Di Michiel, Marco ; Schorr, Susan ; Klenk, Reiner and Lehmann, Sebastian LU
- organization
- publishing date
- 2016
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- crystal structure analysis, cubic, high temperature, InS, indium sulfide, lattice parameter, Rietveld refinement, tetragonal, thermal expansion coefficient, trigonal
- in
- Acta Crystallographica. Section B: Structural Science, Crystal Engineering and Materials
- volume
- 72
- pages
- 6 pages
- publisher
- Wiley-Blackwell
- external identifiers
-
- pmid:27240773
- wos:000377607300014
- scopus:84971644092
- ISSN
- 2052-5192
- DOI
- 10.1107/S2052520616007058
- language
- English
- LU publication?
- yes
- id
- c983c122-5954-4088-a5ba-4b9809c6b119
- date added to LUP
- 2017-02-07 12:30:07
- date last changed
- 2024-04-28 05:36:45
@article{c983c122-5954-4088-a5ba-4b9809c6b119,
abstract = {{<p>Semiconducting indium sulfide (In<sub>2</sub>S<sub>3</sub>) has recently attracted considerable attention as a buffer material in the field of thin film photovoltaics. Compared with this growing interest, however, detailed characterizations of the crystal structure of this material are rather scarce and controversial. In order to close this gap, we have carried out a reinvestigation of the crystal structure of this material with an in situ X-ray diffraction study as a function of temperature using monochromatic synchrotron radiation. For the purpose of this study, high quality polycrystalline In<sub>2</sub>S<sub>3</sub> material with nominally stoichiometric composition was synthesized at high temperatures. We found three modifications of In<sub>2</sub>S<sub>3</sub> in the temperature range between 300 and 1300 K, with structural phase transitions at temperatures of 717 K and above 1049 K. By Rietveld refinement we extracted the crystal structure data and the temperature coefficients of the lattice constants for all three phases, including a high-temperature trigonal γ-In<sub>2</sub>S<sub>3</sub> modification.</p>}},
author = {{Pistor, Paul and Merino Álvarez, Jose M. and León, Máximo and Di Michiel, Marco and Schorr, Susan and Klenk, Reiner and Lehmann, Sebastian}},
issn = {{2052-5192}},
keywords = {{crystal structure analysis; cubic; high temperature; InS; indium sulfide; lattice parameter; Rietveld refinement; tetragonal; thermal expansion coefficient; trigonal}},
language = {{eng}},
pages = {{410--415}},
publisher = {{Wiley-Blackwell}},
series = {{Acta Crystallographica. Section B: Structural Science, Crystal Engineering and Materials}},
title = {{Structure reinvestigation of α-, β- And γ-In<sub>2</sub>S<sub>3</sub>}},
url = {{http://dx.doi.org/10.1107/S2052520616007058}},
doi = {{10.1107/S2052520616007058}},
volume = {{72}},
year = {{2016}},
}