Bipolar Monte Carlo simulation of hot carriers in III-N LEDs
(2015) 15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015 2015-May. p.11-12- Abstract
We perform fully bipolar Monte Carlo simulations of electrons and holes in III-Nitride multi-quantum well light-emitting diodes (LEDs) to investigate the effects of hot carriers. Our results show how accounting for hot carriers affects the current-voltage characteristics and device efficiency. We also discuss the effects of bandstructure details on the simulation results. Further simulations with versatile QW and EBL configurations are needed to confirm the relationship between hot carrier effects and current-voltage characteristics.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/f158b410-158b-4b45-b51e-3200177a71c7
- author
- Kivisaari, Pyry LU ; Sadi, Toufik ; Li, Jingrui ; Oksanen, Jani ; Rinke, Patrick and Tulkki, Jukka
- organization
- publishing date
- 2015-05-10
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- Charge carrier processes, Gallium nitride, Hot carrier effects, Light emitting diodes, Monte Carlo methods, Scattering
- host publication
- 15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015
- volume
- 2015-May
- article number
- 7292797
- pages
- 2 pages
- publisher
- IEEE Computer Society
- conference name
- 15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015
- conference location
- Taipei, Taiwan
- conference dates
- 2015-09-07 - 2015-09-11
- external identifiers
-
- scopus:84959233297
- ISBN
- 9781479983797
- DOI
- 10.1109/NUSOD.2015.7292797
- language
- English
- LU publication?
- yes
- id
- f158b410-158b-4b45-b51e-3200177a71c7
- date added to LUP
- 2016-09-23 12:11:09
- date last changed
- 2022-01-30 06:19:00
@inproceedings{f158b410-158b-4b45-b51e-3200177a71c7, abstract = {{<p>We perform fully bipolar Monte Carlo simulations of electrons and holes in III-Nitride multi-quantum well light-emitting diodes (LEDs) to investigate the effects of hot carriers. Our results show how accounting for hot carriers affects the current-voltage characteristics and device efficiency. We also discuss the effects of bandstructure details on the simulation results. Further simulations with versatile QW and EBL configurations are needed to confirm the relationship between hot carrier effects and current-voltage characteristics.</p>}}, author = {{Kivisaari, Pyry and Sadi, Toufik and Li, Jingrui and Oksanen, Jani and Rinke, Patrick and Tulkki, Jukka}}, booktitle = {{15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015}}, isbn = {{9781479983797}}, keywords = {{Charge carrier processes; Gallium nitride; Hot carrier effects; Light emitting diodes; Monte Carlo methods; Scattering}}, language = {{eng}}, month = {{05}}, pages = {{11--12}}, publisher = {{IEEE Computer Society}}, title = {{Bipolar Monte Carlo simulation of hot carriers in III-N LEDs}}, url = {{http://dx.doi.org/10.1109/NUSOD.2015.7292797}}, doi = {{10.1109/NUSOD.2015.7292797}}, volume = {{2015-May}}, year = {{2015}}, }