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Demonstration of hexagonal phase silicon carbide nanowire arrays with vertical alignment

Luna, Lunet E.; Ophus, Colin; Johansson, Jonas LU ; Maboudian, Roya and Carraro, Carlo (2016) In Crystal Growth and Design 16(5). p.2887-2892
Abstract

SiC nanowire based electronics hold promise for data collection in harsh environments wherein conventional semiconductor platforms would fail. However, the full adaptation of SiC nanowires as a material platform necessitates strict control of nanowire crystal structure and orientation for reliable performance. Toward such efforts, we report the growth of hexagonal phase SiC nanowire arrays grown with vertical alignment on commercially available single crystalline SiC substrates. The nanowire hexagonality, confirmed with Raman spectroscopy and atomic resolution microscopy, displays a polytypic distribution of predominantly 2H and 4H. Employing a theoretical growth model, the polytypic distribution of hexagonal phase nanowires is... (More)

SiC nanowire based electronics hold promise for data collection in harsh environments wherein conventional semiconductor platforms would fail. However, the full adaptation of SiC nanowires as a material platform necessitates strict control of nanowire crystal structure and orientation for reliable performance. Toward such efforts, we report the growth of hexagonal phase SiC nanowire arrays grown with vertical alignment on commercially available single crystalline SiC substrates. The nanowire hexagonality, confirmed with Raman spectroscopy and atomic resolution microscopy, displays a polytypic distribution of predominantly 2H and 4H. Employing a theoretical growth model, the polytypic distribution of hexagonal phase nanowires is accurately predicted in the regime of high supersaturation. Additionally, the reduction of disorder-induced phonon density of states is achieved while maintaining nanowire morphology through a postgrowth anneal. The results of this work expand the repertoire of SiC nanowires by implementing a low-temperature method that promotes polytypes outside the well-studied cubic phase and introduces uniform, vertical alignment on industry standard SiC substrates.

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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Crystal Growth and Design
volume
16
issue
5
pages
6 pages
publisher
The American Chemical Society
external identifiers
  • Scopus:84969505829
ISSN
1528-7483
DOI
10.1021/acs.cgd.6b00203
language
English
LU publication?
yes
id
20a7e7eb-a575-465e-96e1-af9772a23b81
date added to LUP
2016-09-28 13:58:46
date last changed
2016-11-02 11:34:55
@misc{20a7e7eb-a575-465e-96e1-af9772a23b81,
  abstract     = {<p>SiC nanowire based electronics hold promise for data collection in harsh environments wherein conventional semiconductor platforms would fail. However, the full adaptation of SiC nanowires as a material platform necessitates strict control of nanowire crystal structure and orientation for reliable performance. Toward such efforts, we report the growth of hexagonal phase SiC nanowire arrays grown with vertical alignment on commercially available single crystalline SiC substrates. The nanowire hexagonality, confirmed with Raman spectroscopy and atomic resolution microscopy, displays a polytypic distribution of predominantly 2H and 4H. Employing a theoretical growth model, the polytypic distribution of hexagonal phase nanowires is accurately predicted in the regime of high supersaturation. Additionally, the reduction of disorder-induced phonon density of states is achieved while maintaining nanowire morphology through a postgrowth anneal. The results of this work expand the repertoire of SiC nanowires by implementing a low-temperature method that promotes polytypes outside the well-studied cubic phase and introduces uniform, vertical alignment on industry standard SiC substrates.</p>},
  author       = {Luna, Lunet E. and Ophus, Colin and Johansson, Jonas and Maboudian, Roya and Carraro, Carlo},
  issn         = {1528-7483},
  language     = {eng},
  month        = {05},
  number       = {5},
  pages        = {2887--2892},
  publisher    = {ARRAY(0xb227eb8)},
  series       = {Crystal Growth and Design},
  title        = {Demonstration of hexagonal phase silicon carbide nanowire arrays with vertical alignment},
  url          = {http://dx.doi.org/10.1021/acs.cgd.6b00203},
  volume       = {16},
  year         = {2016},
}