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Diffusion-driven current transport to near-surface nanostructures

Kivisaari, Pyry LU ; Riuttanen, Lauri ; Suihkonen, Sami and Oksanen, Jani (2015) 15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015 p.117-118
Abstract

Diffusion-driven current transport (DDCT) has recently been proposed as a new way to organize the current injection in nanoscale optoelectronic devices. The very recent first proof-of-principle experiments have also shown that DDCT works as predicted theoretically. In this work we perform simulations on DDCT-based III-Nitride devices and demonstrate how the optimization of DDCT differs significantly from the optimization of conventional double heterostructure based devices.

Please use this url to cite or link to this publication:
author
; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
Charge carrier processes, Doping, Electric potential, Gallium nitride, Nanostructures, Optimization, Semiconductor process modeling
host publication
15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015
article number
7292850
pages
2 pages
publisher
IEEE Computer Society
conference name
15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015
conference location
Taipei, Taiwan
conference dates
2015-09-07 - 2015-09-11
external identifiers
  • scopus:84959189149
ISBN
9781479983797
DOI
10.1109/NUSOD.2015.7292850
language
English
LU publication?
yes
id
29d0c811-c9b3-41ba-b105-2e7177eb758c
date added to LUP
2016-09-23 12:13:59
date last changed
2022-01-30 06:19:00
@inproceedings{29d0c811-c9b3-41ba-b105-2e7177eb758c,
  abstract     = {{<p>Diffusion-driven current transport (DDCT) has recently been proposed as a new way to organize the current injection in nanoscale optoelectronic devices. The very recent first proof-of-principle experiments have also shown that DDCT works as predicted theoretically. In this work we perform simulations on DDCT-based III-Nitride devices and demonstrate how the optimization of DDCT differs significantly from the optimization of conventional double heterostructure based devices.</p>}},
  author       = {{Kivisaari, Pyry and Riuttanen, Lauri and Suihkonen, Sami and Oksanen, Jani}},
  booktitle    = {{15th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2015}},
  isbn         = {{9781479983797}},
  keywords     = {{Charge carrier processes; Doping; Electric potential; Gallium nitride; Nanostructures; Optimization; Semiconductor process modeling}},
  language     = {{eng}},
  month        = {{05}},
  pages        = {{117--118}},
  publisher    = {{IEEE Computer Society}},
  title        = {{Diffusion-driven current transport to near-surface nanostructures}},
  url          = {{http://dx.doi.org/10.1109/NUSOD.2015.7292850}},
  doi          = {{10.1109/NUSOD.2015.7292850}},
  year         = {{2015}},
}