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Mechanisms of template-assisted selective epitaxy of InAs nanowires on Si

Borg, Mattias LU ; Schmid, Heinz; Moselund, Kirsten E.; Cutaia, Davide and Riel, Heike (2015) In Journal of Applied Physics 117(14).
Abstract

A comprehensive investigation of InAs epitaxy on silicon using template-assisted selective epitaxy is presented. The variation in axial growth rate of InAs nanowires inside oxide nanotube templates is studied as function of nanotube diameter (20-140 nm), growth time (0-30 min), growth temperature (520-580 °C), V/III ratio (40-160), nanotube spacing (300-2000 nm), and substrate crystal orientation. It is found that the effective V/III ratio is reduced at least by a factor of two within the nanotube templates compared to the outside, detectable by changes in the growth facet morphology. The reduced V/III ratio originates from the different transport mechanisms for the As and In precursor species; As and In species are both transported by... (More)

A comprehensive investigation of InAs epitaxy on silicon using template-assisted selective epitaxy is presented. The variation in axial growth rate of InAs nanowires inside oxide nanotube templates is studied as function of nanotube diameter (20-140 nm), growth time (0-30 min), growth temperature (520-580 °C), V/III ratio (40-160), nanotube spacing (300-2000 nm), and substrate crystal orientation. It is found that the effective V/III ratio is reduced at least by a factor of two within the nanotube templates compared to the outside, detectable by changes in the growth facet morphology. The reduced V/III ratio originates from the different transport mechanisms for the As and In precursor species; As and In species are both transported by Knudsen diffusion in the vapor, but an additional contribution of In surface diffusion reduces the V/III ratio. The results reveal the interplay of growth parameters, crystal facets and template geometry and thus are generally applicable for nanoscale selective epitaxy.

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publishing date
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publication status
published
subject
in
Journal of Applied Physics
volume
117
issue
14
publisher
American Institute of Physics
external identifiers
  • Scopus:84927618871
DOI
10.1063/1.4916984
language
English
LU publication?
no
id
3949f69b-ed27-43c9-9b10-c397e7a6e308
date added to LUP
2016-04-20 10:23:05
date last changed
2016-11-17 15:44:18
@misc{3949f69b-ed27-43c9-9b10-c397e7a6e308,
  abstract     = {<p>A comprehensive investigation of InAs epitaxy on silicon using template-assisted selective epitaxy is presented. The variation in axial growth rate of InAs nanowires inside oxide nanotube templates is studied as function of nanotube diameter (20-140 nm), growth time (0-30 min), growth temperature (520-580 °C), V/III ratio (40-160), nanotube spacing (300-2000 nm), and substrate crystal orientation. It is found that the effective V/III ratio is reduced at least by a factor of two within the nanotube templates compared to the outside, detectable by changes in the growth facet morphology. The reduced V/III ratio originates from the different transport mechanisms for the As and In precursor species; As and In species are both transported by Knudsen diffusion in the vapor, but an additional contribution of In surface diffusion reduces the V/III ratio. The results reveal the interplay of growth parameters, crystal facets and template geometry and thus are generally applicable for nanoscale selective epitaxy.</p>},
  author       = {Borg, Mattias and Schmid, Heinz and Moselund, Kirsten E. and Cutaia, Davide and Riel, Heike},
  language     = {eng},
  month        = {04},
  number       = {14},
  publisher    = {ARRAY(0x810fb18)},
  series       = {Journal of Applied Physics},
  title        = {Mechanisms of template-assisted selective epitaxy of InAs nanowires on Si},
  url          = {http://dx.doi.org/10.1063/1.4916984},
  volume       = {117},
  year         = {2015},
}