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How to control SiC BJT with high efficiency?

Wang, Luyu LU and Bängtsson, Hans LU (2012) 2012 7th International Conference on Integrated Power Electronics Systems (CIPS) In 2012 7th International Conference on Integrated Power Electronics Systems (CIPS 2012) p.1-4
Abstract
SiC Bipolar Junction Transistor has many benefits such as low on-state voltage drop, high switching speed and high maximum operating temperature. However it has one major disadvantage that it needs current to be turned on. This causes an increased power requirement of the driver circuit compared to voltage controlled devices like MOSFETs and IGBTs. The proposed driving concept is based on a verified Darlington typology together with a voltage compensation component which gives a solution to this problem. The proposed driving concept is evaluated by both simulation and experimental results. The investigation of parallel connection of SiC BJT transistors that use the proposed drive concept is also included in this paper.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
Darlington typology SiC SiC BJT bipolar junction transistor on-state voltage drop operating temperature switching speed voltage compensation component voltage controlled device
in
2012 7th International Conference on Integrated Power Electronics Systems (CIPS 2012)
pages
1 - 4
conference name
2012 7th International Conference on Integrated Power Electronics Systems (CIPS)
external identifiers
  • Scopus:84881113737
ISBN
978-3-8007-3414-6
language
English
LU publication?
yes
id
50962e7e-d93d-4c56-b452-db65f677f875 (old id 4351740)
alternative location
http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=6170689
date added to LUP
2014-03-06 11:32:56
date last changed
2016-10-13 04:59:56
@misc{50962e7e-d93d-4c56-b452-db65f677f875,
  abstract     = {SiC Bipolar Junction Transistor has many benefits such as low on-state voltage drop, high switching speed and high maximum operating temperature. However it has one major disadvantage that it needs current to be turned on. This causes an increased power requirement of the driver circuit compared to voltage controlled devices like MOSFETs and IGBTs. The proposed driving concept is based on a verified Darlington typology together with a voltage compensation component which gives a solution to this problem. The proposed driving concept is evaluated by both simulation and experimental results. The investigation of parallel connection of SiC BJT transistors that use the proposed drive concept is also included in this paper.},
  author       = {Wang, Luyu and Bängtsson, Hans},
  isbn         = {978-3-8007-3414-6},
  keyword      = {Darlington typology SiC SiC BJT bipolar junction transistor on-state voltage drop operating temperature switching speed voltage compensation component voltage controlled device},
  language     = {eng},
  pages        = {1--4},
  series       = {2012 7th International Conference on Integrated Power Electronics Systems (CIPS 2012)},
  title        = {How to control SiC BJT with high efficiency?},
  year         = {2012},
}