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Site-control of InAs quantum dots on a patterned InP surface: As/P exchange reactions

Borgström, Magnus LU ; Bryllert, Tomas LU ; Sass, T.; Wernersson, Lars-Erik LU ; Samuelson, Lars LU and Seifert, Werner LU (2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21) In 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
Abstract
We present the effect of annealing temperature and annealing time on InAs/InP site-controlled quantum dot growth. Electron beam pre-patterning forms carbon nano-deposits at the InP surface, which then can be used as growth masks to form nano-holes at the surface. By only annealing of the patterned InP surface under an arsine ambient, As/P exchange reactions produce material sufficient for selective dot nucleation in the holes at the surface
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
selective dot nucleation, arsine ambient, InAs-InP, nanoholes, patterned InP surface, InAs quantum dots, As/P exchange reactions, annealing temperature, annealing time, InAs/InP site controlled quantum dot growth, electron beam prepatterning forms, carbon nanodeposits, growth masks, InP surface
in
7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
pages
2 pages
publisher
Lund University
conference name
Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
language
English
LU publication?
yes
id
65732360-54bc-4d8f-917b-b62b3313a6c8 (old id 610468)
date added to LUP
2007-11-27 10:45:04
date last changed
2016-08-16 15:32:12
@misc{65732360-54bc-4d8f-917b-b62b3313a6c8,
  abstract     = {We present the effect of annealing temperature and annealing time on InAs/InP site-controlled quantum dot growth. Electron beam pre-patterning forms carbon nano-deposits at the InP surface, which then can be used as growth masks to form nano-holes at the surface. By only annealing of the patterned InP surface under an arsine ambient, As/P exchange reactions produce material sufficient for selective dot nucleation in the holes at the surface},
  author       = {Borgström, Magnus and Bryllert, Tomas and Sass, T. and Wernersson, Lars-Erik and Samuelson, Lars and Seifert, Werner},
  keyword      = {selective dot nucleation,arsine ambient,InAs-InP,nanoholes,patterned InP surface,InAs quantum dots,As/P exchange reactions,annealing temperature,annealing time,InAs/InP site controlled quantum dot growth,electron beam prepatterning forms,carbon nanodeposits,growth masks,InP surface},
  language     = {eng},
  pages        = {2},
  publisher    = {ARRAY(0x8920eb8)},
  series       = {7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science},
  title        = {Site-control of InAs quantum dots on a patterned InP surface: As/P exchange reactions},
  year         = {2002},
}