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Three-terminal ballistic junctions: new building blocks for functional devices in nanoelectronics

Xu, Hongqi LU ; Shorubalko, Ivan LU ; Maximov, Ivan LU ; Seifert, Werner LU ; Omling, Pär LU and Samuelson, Lars LU (2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21) In 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
Abstract
A three-terminal ballistic junction (TBJ) is a device in which three quantum point contacts are coupled via a ballistic region. Previous studies have shown that the TBJs exhibit a novel electrical property which has potential applications in nanoelectronics. Here, based on our recent theoretical and experimental investigations, we will demonstrate that various nanoelectronic devices can be fabricated using the TBJs as building blocks. In particular, the results of our recent design, fabrication, modeling and measurements of TBJ diodes and transistors, TBJ frequency multipliers, and TBJ logic gates will be presented and discussed
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
potential applications, electrical property, ballistic region, three quantum point contacts, nanoelectronics, three terminal ballistic junctions, functional devices, TBJ diodes, fabrication, TBJ frequency multipliers, transistors, TBJ logic gates
in
7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
pages
2 pages
publisher
Lund University
conference name
Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
language
English
LU publication?
yes
id
993af250-077c-4187-b8fc-9fbcdb07414d (old id 610485)
date added to LUP
2007-11-29 12:57:51
date last changed
2016-10-31 10:28:06
@misc{993af250-077c-4187-b8fc-9fbcdb07414d,
  abstract     = {A three-terminal ballistic junction (TBJ) is a device in which three quantum point contacts are coupled via a ballistic region. Previous studies have shown that the TBJs exhibit a novel electrical property which has potential applications in nanoelectronics. Here, based on our recent theoretical and experimental investigations, we will demonstrate that various nanoelectronic devices can be fabricated using the TBJs as building blocks. In particular, the results of our recent design, fabrication, modeling and measurements of TBJ diodes and transistors, TBJ frequency multipliers, and TBJ logic gates will be presented and discussed},
  author       = {Xu, Hongqi and Shorubalko, Ivan and Maximov, Ivan and Seifert, Werner and Omling, Pär and Samuelson, Lars},
  keyword      = {potential applications,electrical property,ballistic region,three quantum point contacts,nanoelectronics,three terminal ballistic junctions,functional devices,TBJ diodes,fabrication,TBJ frequency multipliers,transistors,TBJ logic gates},
  language     = {eng},
  pages        = {2},
  publisher    = {ARRAY(0xb868bd8)},
  series       = {7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science},
  title        = {Three-terminal ballistic junctions: new building blocks for functional devices in nanoelectronics},
  year         = {2002},
}