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Resonant tunneling through coupled self-assembled quantum dots and the influence of inhomogeneous broadening

Bryllert, Tomas LU ; Borgström, Magnus LU ; Sass, T.; Gustafson, Boel LU ; Landin, L.; Wernersson, Lars-Erik LU ; Seifert, Werner LU and Samuelson, Lars LU (2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21) In 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
Abstract
Resonant tunneling through a single layer of self-assembled quantum dots (QDs) as well as tunneling through two layers of vertically aligned (stacked) dots is investigated. The difference between single and double layers of QDs can be viewed as going from a two-dimensional emitter to a zero-dimensional emitter. By fabricating small-area devices we are able to probe single stacks of quantum dots, revealing details of the coupling between the stacked dots. Very sharp resonances, with peak-to-valley ratios of several hundred, have been measured in the current-voltage characteristics. We also show that the statistical size distribution of self-assembled quantum dots causing the inhomogeneous broadening in luminescence experiments can be... (More)
Resonant tunneling through a single layer of self-assembled quantum dots (QDs) as well as tunneling through two layers of vertically aligned (stacked) dots is investigated. The difference between single and double layers of QDs can be viewed as going from a two-dimensional emitter to a zero-dimensional emitter. By fabricating small-area devices we are able to probe single stacks of quantum dots, revealing details of the coupling between the stacked dots. Very sharp resonances, with peak-to-valley ratios of several hundred, have been measured in the current-voltage characteristics. We also show that the statistical size distribution of self-assembled quantum dots causing the inhomogeneous broadening in luminescence experiments can be analysed in a resonant tunneling experiment (Less)
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author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
resonance, stacked dots, single stacks, small area devices, zero-dimensional emitter, two-dimensional emitter, vertically aligned dots, inhomogeneous broadening, QD, resonant tunneling, coupled self-assembled quantum dots, peak-valley ratios, current-voltage characteristics, statistical size distribution, luminescence experiments, InAs-InP
in
7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
pages
2 pages
publisher
Lund University
conference name
Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
language
English
LU publication?
yes
id
a2697019-5603-4ebd-b818-f10ee43b5eed (old id 610782)
date added to LUP
2007-11-27 10:46:20
date last changed
2016-04-16 08:13:26
@misc{a2697019-5603-4ebd-b818-f10ee43b5eed,
  abstract     = {Resonant tunneling through a single layer of self-assembled quantum dots (QDs) as well as tunneling through two layers of vertically aligned (stacked) dots is investigated. The difference between single and double layers of QDs can be viewed as going from a two-dimensional emitter to a zero-dimensional emitter. By fabricating small-area devices we are able to probe single stacks of quantum dots, revealing details of the coupling between the stacked dots. Very sharp resonances, with peak-to-valley ratios of several hundred, have been measured in the current-voltage characteristics. We also show that the statistical size distribution of self-assembled quantum dots causing the inhomogeneous broadening in luminescence experiments can be analysed in a resonant tunneling experiment},
  author       = {Bryllert, Tomas and Borgström, Magnus and Sass, T. and Gustafson, Boel and Landin, L. and Wernersson, Lars-Erik and Seifert, Werner and Samuelson, Lars},
  keyword      = {resonance,stacked dots,single stacks,small area devices,zero-dimensional emitter,two-dimensional emitter,vertically aligned dots,inhomogeneous broadening,QD,resonant tunneling,coupled self-assembled quantum dots,peak-valley ratios,current-voltage characteristics,statistical size distribution,luminescence experiments,InAs-InP},
  language     = {eng},
  pages        = {2},
  publisher    = {ARRAY(0x6bfb410)},
  series       = {7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science},
  title        = {Resonant tunneling through coupled self-assembled quantum dots and the influence of inhomogeneous broadening},
  year         = {2002},
}