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A resonant galvanically separated power MOSFET/IGBT gate driver

Bergh, Tomas LU ; Karlsson, Per LU and Alaküla, Mats LU (2004) 2004 IEEE 35th Annual Power Electronics Specialists Conference In 2004 IEEE 35th Annual Power Electronics Specialists Conference p.3243-3247
Abstract
This paper provides a complete circuit for a low-loss non-conventional power MOSFET or IGBT driver. The driver, which provides galvanically separated input and output signals, is fed from a unipolar DC voltage but provides a bipolar gate-source voltage. The driver applies two, already known, techniques and together they form a resonant galvanically separated power MOSFET/IGBT gate driver. The first technique provides the galvanic separation, voltage level increase (or decrease) for the energy supply and signal transfer to the second technique. The second technique is the driver circuit, which is a resonant circuit that provides good driver properties. Together they form an inexpensive and non-complicated circuit, compared to conventional... (More)
This paper provides a complete circuit for a low-loss non-conventional power MOSFET or IGBT driver. The driver, which provides galvanically separated input and output signals, is fed from a unipolar DC voltage but provides a bipolar gate-source voltage. The driver applies two, already known, techniques and together they form a resonant galvanically separated power MOSFET/IGBT gate driver. The first technique provides the galvanic separation, voltage level increase (or decrease) for the energy supply and signal transfer to the second technique. The second technique is the driver circuit, which is a resonant circuit that provides good driver properties. Together they form an inexpensive and non-complicated circuit, compared to conventional MOSFET or IGBT drivers. The use of expensive DC-DC converters is avoided and still bipolar gate voltages are provided (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
galvanic separation, bipolar gate-source voltage, unipolar DC voltage, IGBT driver, resonant galvanically driver, power MOSFET gate driver, resonant circuit, signal transfer, DC-DC converter
in
2004 IEEE 35th Annual Power Electronics Specialists Conference
pages
3243 - 3247
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
conference name
2004 IEEE 35th Annual Power Electronics Specialists Conference
external identifiers
  • WOS:000224587600533
  • Scopus:8744260698
ISBN
0-7803-8399-0
DOI
10.1109/PESC.2004.1355355
language
English
LU publication?
yes
id
dee30593-43cb-4bbf-82a6-40ca50fe84d7 (old id 613918)
date added to LUP
2007-11-26 17:33:38
date last changed
2016-10-13 04:41:18
@misc{dee30593-43cb-4bbf-82a6-40ca50fe84d7,
  abstract     = {This paper provides a complete circuit for a low-loss non-conventional power MOSFET or IGBT driver. The driver, which provides galvanically separated input and output signals, is fed from a unipolar DC voltage but provides a bipolar gate-source voltage. The driver applies two, already known, techniques and together they form a resonant galvanically separated power MOSFET/IGBT gate driver. The first technique provides the galvanic separation, voltage level increase (or decrease) for the energy supply and signal transfer to the second technique. The second technique is the driver circuit, which is a resonant circuit that provides good driver properties. Together they form an inexpensive and non-complicated circuit, compared to conventional MOSFET or IGBT drivers. The use of expensive DC-DC converters is avoided and still bipolar gate voltages are provided},
  author       = {Bergh, Tomas and Karlsson, Per and Alaküla, Mats},
  isbn         = {0-7803-8399-0},
  keyword      = {galvanic separation,bipolar gate-source voltage,unipolar DC voltage,IGBT driver,resonant galvanically driver,power MOSFET gate driver,resonant circuit,signal transfer,DC-DC converter},
  language     = {eng},
  pages        = {3243--3247},
  publisher    = {ARRAY(0x8611008)},
  series       = {2004 IEEE 35th Annual Power Electronics Specialists Conference},
  title        = {A resonant galvanically separated power MOSFET/IGBT gate driver},
  url          = {http://dx.doi.org/10.1109/PESC.2004.1355355},
  year         = {2004},
}