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InP nanowire p-type doping via Zinc indiffusion

Haggren, Tuomas; Otnes, Gaute LU ; Mourão, Renato; Dagyte, Vilgaile LU ; Hultin, Olof LU ; Lindelöw, Fredrik LU ; Borgström, Magnus LU and Samuelson, Lars LU (2016) In Journal of Crystal Growth 451. p.18-26
Abstract

We report an alternative pathway for p-type InP nanowire (NW) doping by diffusion of Zn species from the gas phase. The diffusion of Zn was performed in a MOVPE reactor at 350–500 °C for 5–20 min with either H2 environment or additional phosphorus in the atmosphere. In addition, Zn3P2 shells were studied as protective caps during post-diffusion annealing. This post-diffusion annealing was performed to outdiffuse and activate Zn in interstitial locations. The characterization methods included photoluminescence and single NW conductivity and carrier concentration measurements. The acquired carrier concentrations were in the order of >1017 cm−3 for NWs without post-annealing, and up... (More)

We report an alternative pathway for p-type InP nanowire (NW) doping by diffusion of Zn species from the gas phase. The diffusion of Zn was performed in a MOVPE reactor at 350–500 °C for 5–20 min with either H2 environment or additional phosphorus in the atmosphere. In addition, Zn3P2 shells were studied as protective caps during post-diffusion annealing. This post-diffusion annealing was performed to outdiffuse and activate Zn in interstitial locations. The characterization methods included photoluminescence and single NW conductivity and carrier concentration measurements. The acquired carrier concentrations were in the order of >1017 cm−3 for NWs without post-annealing, and up to 1018 cm−3 for NWs annealed with the Zn3P2 shells. The diffused Zn caused redshift to the photoluminescence signal, and the degree of redshift depended on the diffusion process.

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author
organization
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type
Contribution to journal
publication status
published
subject
keywords
A1. Annealing, A1. Diffusion, A1. Doping, A3. Metalorganic vapor phase epitaxy, B2. Semiconducting III–V materials, B3. Field effect transistors
in
Journal of Crystal Growth
volume
451
pages
9 pages
publisher
Elsevier
external identifiers
  • Scopus:84978066023
ISSN
0022-0248
DOI
10.1016/j.jcrysgro.2016.06.020
language
English
LU publication?
yes
id
9a1f7783-26dd-4f93-9730-67a195f7af7c
date added to LUP
2016-10-17 10:43:05
date last changed
2016-10-17 10:44:20
@misc{9a1f7783-26dd-4f93-9730-67a195f7af7c,
  abstract     = {<p>We report an alternative pathway for p-type InP nanowire (NW) doping by diffusion of Zn species from the gas phase. The diffusion of Zn was performed in a MOVPE reactor at 350–500 °C for 5–20 min with either H<sub>2</sub> environment or additional phosphorus in the atmosphere. In addition, Zn<sub>3</sub>P<sub>2</sub> shells were studied as protective caps during post-diffusion annealing. This post-diffusion annealing was performed to outdiffuse and activate Zn in interstitial locations. The characterization methods included photoluminescence and single NW conductivity and carrier concentration measurements. The acquired carrier concentrations were in the order of &gt;10<sup>17</sup> cm<sup>−3</sup> for NWs without post-annealing, and up to 10<sup>18</sup> cm<sup>−3</sup> for NWs annealed with the Zn<sub>3</sub>P<sub>2</sub> shells. The diffused Zn caused redshift to the photoluminescence signal, and the degree of redshift depended on the diffusion process.</p>},
  author       = {Haggren, Tuomas and Otnes, Gaute and Mourão, Renato and Dagyte, Vilgaile and Hultin, Olof and Lindelöw, Fredrik and Borgström, Magnus and Samuelson, Lars},
  issn         = {0022-0248},
  keyword      = {A1. Annealing,A1. Diffusion,A1. Doping,A3. Metalorganic vapor phase epitaxy,B2. Semiconducting III–V materials,B3. Field effect transistors},
  language     = {eng},
  month        = {10},
  pages        = {18--26},
  publisher    = {ARRAY(0x9cd9ef0)},
  series       = {Journal of Crystal Growth},
  title        = {InP nanowire p-type doping via Zinc indiffusion},
  url          = {http://dx.doi.org/10.1016/j.jcrysgro.2016.06.020},
  volume       = {451},
  year         = {2016},
}