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Demonstration of Sn-seeded GaSb homo- and GaAs-GaSb heterostructural nanowires

Tornberg, Marcus LU ; Märtensson, Erik K. LU ; Zamani, Reza R. LU ; Lehmann, Sebastian LU ; Dick, Kimberly A. LU and Ghalamestani, Sepideh Gorji LU (2016) In Nanotechnology 27(17).
Abstract

The particle-assisted epitaxial growth of antimonide-based nanowires has mainly been realized using gold as the seed material. However, the Au-seeded epitaxial growth of antimonide-based nanowires such as GaSb nanowires presents several challenges such as for example direct nucleation issues and crystal structure tuning. Therefore, it is of great importance to understand the role of seed material choice and properties in the growth behavior of antimonide-based nanowires to obtain a deeper understanding and a better control on their formation processes. In this report, we have investigated the epitaxial growth of GaSb and GaAs-GaSb nanowires using in situ-formed tin seeds by means of metalorganic vapor phase epitaxy technique. This... (More)

The particle-assisted epitaxial growth of antimonide-based nanowires has mainly been realized using gold as the seed material. However, the Au-seeded epitaxial growth of antimonide-based nanowires such as GaSb nanowires presents several challenges such as for example direct nucleation issues and crystal structure tuning. Therefore, it is of great importance to understand the role of seed material choice and properties in the growth behavior of antimonide-based nanowires to obtain a deeper understanding and a better control on their formation processes. In this report, we have investigated the epitaxial growth of GaSb and GaAs-GaSb nanowires using in situ-formed tin seeds by means of metalorganic vapor phase epitaxy technique. This comprehensive report covers the growth of in situ-formed tin seeds and Sn-seeded GaSb nanowires on both GaAs and GaSb (111)B substrates, as well as GaAs-GaSb nanowires on GaAs (111)B substrates. The growth behavior and structural properties of the obtained GaSb nanowires are further investigated and compared with the Au-seeded counterparts. The results provided by this study demonstrate that Sn is a promising seed material for the growth of GaSb nanowires.

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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
antimonide, GaAs, GaSb, heterostructure, III-V semiconductor, nanowire, Sn
in
Nanotechnology
volume
27
issue
17
publisher
IOP Publishing
external identifiers
  • Scopus:84961905712
ISSN
0957-4484
DOI
10.1088/0957-4484/27/17/175602
language
English
LU publication?
yes
id
c3b6f870-29da-4b60-baca-9c742dc9e659
date added to LUP
2016-07-08 08:30:24
date last changed
2016-09-20 03:09:08
@misc{c3b6f870-29da-4b60-baca-9c742dc9e659,
  abstract     = {<p>The particle-assisted epitaxial growth of antimonide-based nanowires has mainly been realized using gold as the seed material. However, the Au-seeded epitaxial growth of antimonide-based nanowires such as GaSb nanowires presents several challenges such as for example direct nucleation issues and crystal structure tuning. Therefore, it is of great importance to understand the role of seed material choice and properties in the growth behavior of antimonide-based nanowires to obtain a deeper understanding and a better control on their formation processes. In this report, we have investigated the epitaxial growth of GaSb and GaAs-GaSb nanowires using in situ-formed tin seeds by means of metalorganic vapor phase epitaxy technique. This comprehensive report covers the growth of in situ-formed tin seeds and Sn-seeded GaSb nanowires on both GaAs and GaSb (111)B substrates, as well as GaAs-GaSb nanowires on GaAs (111)B substrates. The growth behavior and structural properties of the obtained GaSb nanowires are further investigated and compared with the Au-seeded counterparts. The results provided by this study demonstrate that Sn is a promising seed material for the growth of GaSb nanowires.</p>},
  author       = {Tornberg, Marcus and Märtensson, Erik K. and Zamani, Reza R. and Lehmann, Sebastian and Dick, Kimberly A. and Ghalamestani, Sepideh Gorji},
  issn         = {0957-4484},
  keyword      = {antimonide,GaAs,GaSb,heterostructure,III-V semiconductor,nanowire,Sn},
  language     = {eng},
  month        = {03},
  number       = {17},
  publisher    = {ARRAY(0x9e86c48)},
  series       = {Nanotechnology},
  title        = {Demonstration of Sn-seeded GaSb homo- and GaAs-GaSb heterostructural nanowires},
  url          = {http://dx.doi.org/10.1088/0957-4484/27/17/175602},
  volume       = {27},
  year         = {2016},
}