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Doping efficiency and limits in (Mg,Zn)O:Al,Ga thin films with two-dimensional lateral composition spread

Mavlonov, Abdurashid ; Richter, Steffen LU ; Von Wenckstern, Holger ; Schmidt-Grund, Rüdiger ; Lenzner, Jörg ; Lorenz, Michael and Grundmann, Marius (2015) In Physica Status Solidi (A) Applications and Materials Science 212(12). p.2850-2855
Abstract

We have investigated structural, optical, and electrical properties of MgxZn1-xO:(Al/Ga) thin films in dependence on Mg and Al/Ga concentrations. For this purpose, thin films with two perpendicular, lateral composition gradients, i.e., the Mg composition is varied in one direction whereas the Al/Ga concentration is varied in a perpendicular direction were grown at 600-C by pulsed-laser deposition (PLD) using a threefold segmented PLD target and 2-inch in diameter c-plane sapphire substrates. It has been found that compensation by intrinsic acceptors limits efficient doping to dopant concentrations of about 2×1021cm-3. Further, the electrical data suggests, that the compensating defect is doubly chargeable hinting to the zinc vacancy as... (More)

We have investigated structural, optical, and electrical properties of MgxZn1-xO:(Al/Ga) thin films in dependence on Mg and Al/Ga concentrations. For this purpose, thin films with two perpendicular, lateral composition gradients, i.e., the Mg composition is varied in one direction whereas the Al/Ga concentration is varied in a perpendicular direction were grown at 600-C by pulsed-laser deposition (PLD) using a threefold segmented PLD target and 2-inch in diameter c-plane sapphire substrates. It has been found that compensation by intrinsic acceptors limits efficient doping to dopant concentrations of about 2×1021cm-3. Further, the electrical data suggests, that the compensating defect is doubly chargeable hinting to the zinc vacancy as microscopic origin. Increasing the dopant concentration above 2×1021cm-3 leads to a degradation of electrical and structural properties.

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author
; ; ; ; ; and
publishing date
type
Contribution to journal
publication status
published
keywords
(Mg, doping, Pulsed laser deposition, thin films, transparent conductive oxides, Zn)O
in
Physica Status Solidi (A) Applications and Materials Science
volume
212
issue
12
pages
6 pages
publisher
Wiley-Blackwell
external identifiers
  • scopus:84949724641
ISSN
1862-6300
DOI
10.1002/pssa.201431932
language
English
LU publication?
no
additional info
Publisher Copyright: © 2015 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
id
05fd467d-2e5b-480e-b03c-0069e1f3c980
date added to LUP
2022-04-19 14:52:29
date last changed
2022-04-25 16:22:24
@article{05fd467d-2e5b-480e-b03c-0069e1f3c980,
  abstract     = {{<p>We have investigated structural, optical, and electrical properties of MgxZn1-xO:(Al/Ga) thin films in dependence on Mg and Al/Ga concentrations. For this purpose, thin films with two perpendicular, lateral composition gradients, i.e., the Mg composition is varied in one direction whereas the Al/Ga concentration is varied in a perpendicular direction were grown at 600-C by pulsed-laser deposition (PLD) using a threefold segmented PLD target and 2-inch in diameter c-plane sapphire substrates. It has been found that compensation by intrinsic acceptors limits efficient doping to dopant concentrations of about 2×1021cm-3. Further, the electrical data suggests, that the compensating defect is doubly chargeable hinting to the zinc vacancy as microscopic origin. Increasing the dopant concentration above 2×1021cm-3 leads to a degradation of electrical and structural properties.</p>}},
  author       = {{Mavlonov, Abdurashid and Richter, Steffen and Von Wenckstern, Holger and Schmidt-Grund, Rüdiger and Lenzner, Jörg and Lorenz, Michael and Grundmann, Marius}},
  issn         = {{1862-6300}},
  keywords     = {{(Mg; doping; Pulsed laser deposition; thin films; transparent conductive oxides; Zn)O}},
  language     = {{eng}},
  month        = {{12}},
  number       = {{12}},
  pages        = {{2850--2855}},
  publisher    = {{Wiley-Blackwell}},
  series       = {{Physica Status Solidi (A) Applications and Materials Science}},
  title        = {{Doping efficiency and limits in (Mg,Zn)O:Al,Ga thin films with two-dimensional lateral composition spread}},
  url          = {{http://dx.doi.org/10.1002/pssa.201431932}},
  doi          = {{10.1002/pssa.201431932}},
  volume       = {{212}},
  year         = {{2015}},
}