Single-Mode Near-Infrared Lasing in a GaAsSb-Based Nanowire Superlattice at Room Temperature
(2018) In Nano Letters 18(4). p.2304-2310- Abstract
Semiconductor nanowire lasers can produce guided coherent light emission with miniaturized geometry, bringing about new possibilities for a variety of applications including nanophotonic circuits, optical sensing, and on-chip and chip-to-chip optical communications. Here, we report on the realization of single-mode and room-temperature lasing from 890 to 990 nm, utilizing a novel design of single nanowires with GaAsSb-based multiple axial superlattices as a gain medium under optical pumping. The control of lasing wavelength via compositional tuning with excellent room-temperature lasing performance is shown to result from the unique nanowire structure with efficient gain material, which delivers a low lasing threshold of ∼6... (More)
Semiconductor nanowire lasers can produce guided coherent light emission with miniaturized geometry, bringing about new possibilities for a variety of applications including nanophotonic circuits, optical sensing, and on-chip and chip-to-chip optical communications. Here, we report on the realization of single-mode and room-temperature lasing from 890 to 990 nm, utilizing a novel design of single nanowires with GaAsSb-based multiple axial superlattices as a gain medium under optical pumping. The control of lasing wavelength via compositional tuning with excellent room-temperature lasing performance is shown to result from the unique nanowire structure with efficient gain material, which delivers a low lasing threshold of ∼6 kW/cm2 (75 μJ/cm2 per pulse), a lasing quality factor as high as 1250, and a high characteristic temperature of ∼129 K. These results present a major advancement for the design and synthesis of nanowire laser structures, which can pave the way toward future nanoscale integrated optoelectronic systems with superior performance.
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- author
- Ren, Dingding ; Ahtapodov, Lyubomir ; Nilsen, Julie S. ; Yang, Jianfeng ; Gustafsson, Anders LU ; Huh, Junghwan ; Conibeer, Gavin J. ; Van Helvoort, Antonius T.J. ; Fimland, Bjørn Ove and Weman, Helge
- organization
- publishing date
- 2018-04-11
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nano Letters
- volume
- 18
- issue
- 4
- pages
- 7 pages
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- scopus:85045206751
- pmid:29502425
- ISSN
- 1530-6984
- DOI
- 10.1021/acs.nanolett.7b05015
- language
- English
- LU publication?
- yes
- id
- 1061cd0a-e2da-41ff-a445-251a808d8529
- date added to LUP
- 2018-04-18 07:46:36
- date last changed
- 2024-06-25 15:56:04
@article{1061cd0a-e2da-41ff-a445-251a808d8529, abstract = {{<p>Semiconductor nanowire lasers can produce guided coherent light emission with miniaturized geometry, bringing about new possibilities for a variety of applications including nanophotonic circuits, optical sensing, and on-chip and chip-to-chip optical communications. Here, we report on the realization of single-mode and room-temperature lasing from 890 to 990 nm, utilizing a novel design of single nanowires with GaAsSb-based multiple axial superlattices as a gain medium under optical pumping. The control of lasing wavelength via compositional tuning with excellent room-temperature lasing performance is shown to result from the unique nanowire structure with efficient gain material, which delivers a low lasing threshold of ∼6 kW/cm<sup>2</sup> (75 μJ/cm<sup>2</sup> per pulse), a lasing quality factor as high as 1250, and a high characteristic temperature of ∼129 K. These results present a major advancement for the design and synthesis of nanowire laser structures, which can pave the way toward future nanoscale integrated optoelectronic systems with superior performance.</p>}}, author = {{Ren, Dingding and Ahtapodov, Lyubomir and Nilsen, Julie S. and Yang, Jianfeng and Gustafsson, Anders and Huh, Junghwan and Conibeer, Gavin J. and Van Helvoort, Antonius T.J. and Fimland, Bjørn Ove and Weman, Helge}}, issn = {{1530-6984}}, language = {{eng}}, month = {{04}}, number = {{4}}, pages = {{2304--2310}}, publisher = {{The American Chemical Society (ACS)}}, series = {{Nano Letters}}, title = {{Single-Mode Near-Infrared Lasing in a GaAsSb-Based Nanowire Superlattice at Room Temperature}}, url = {{http://dx.doi.org/10.1021/acs.nanolett.7b05015}}, doi = {{10.1021/acs.nanolett.7b05015}}, volume = {{18}}, year = {{2018}}, }