Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric
(2009) In Applied Physics Letters 94(4).- Abstract
- Gate-defined quantum dots in an InGaAs/InP heterostructure are realized by incorporating a high-kappa HfO2 material as a gate dielectric using atomic layer deposition. The fabricated quantum-dot devices show Coulomb blockade effect at low temperature. The Coulomb blockade current peaks are found to shift in pairs with the magnetic field applied perpendicular to the quantum-dot plane, due to the filling of electrons into spin-degenerate orbital states. When the magnetic field is applied parallel to the quantum-dot plane, spin splittings of orbital states are observed and the extracted effective g-factors are found to be different for different orbital states.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1311595
- author
- Sun, Jie LU ; Larsson, Marcus LU ; Maximov, Ivan LU ; Hardtdegen, Hilde and Xu, Hongqi LU
- organization
- publishing date
- 2009
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- quantum, well devices, semiconductor quantum dots, quantum interference devices, nanotechnology, indium compounds, III-V semiconductors, high-k dielectric thin films, hafnium compounds, g-factor, gallium arsenide, atomic layer deposition, Coulomb blockade
- in
- Applied Physics Letters
- volume
- 94
- issue
- 4
- article number
- 042114
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000262971800059
- scopus:59349120065
- ISSN
- 0003-6951
- DOI
- 10.1063/1.3077188
- language
- English
- LU publication?
- yes
- id
- 9ef1290c-e035-42ae-959a-31055e85b8bc (old id 1311595)
- date added to LUP
- 2016-04-01 12:28:54
- date last changed
- 2022-02-03 22:45:30
@article{9ef1290c-e035-42ae-959a-31055e85b8bc, abstract = {{Gate-defined quantum dots in an InGaAs/InP heterostructure are realized by incorporating a high-kappa HfO2 material as a gate dielectric using atomic layer deposition. The fabricated quantum-dot devices show Coulomb blockade effect at low temperature. The Coulomb blockade current peaks are found to shift in pairs with the magnetic field applied perpendicular to the quantum-dot plane, due to the filling of electrons into spin-degenerate orbital states. When the magnetic field is applied parallel to the quantum-dot plane, spin splittings of orbital states are observed and the extracted effective g-factors are found to be different for different orbital states.}}, author = {{Sun, Jie and Larsson, Marcus and Maximov, Ivan and Hardtdegen, Hilde and Xu, Hongqi}}, issn = {{0003-6951}}, keywords = {{quantum; well devices; semiconductor quantum dots; quantum interference devices; nanotechnology; indium compounds; III-V semiconductors; high-k dielectric thin films; hafnium compounds; g-factor; gallium arsenide; atomic layer deposition; Coulomb blockade}}, language = {{eng}}, number = {{4}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Applied Physics Letters}}, title = {{Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric}}, url = {{http://dx.doi.org/10.1063/1.3077188}}, doi = {{10.1063/1.3077188}}, volume = {{94}}, year = {{2009}}, }