Scanning electron microscopy observation of in-device InAs/AlAs quantum dots by selective etching of capping layers
(2007) In Modern Physics Letters B 21(14). p.859-866- Abstract
- Self-assembled InAs/AlAs quantum dots embedded in a resonant tunneling diode device structure are grown by molecular beam epitaxy. Through the selective etching in a C6H8O7 center dot H2O-K3C6H5O7 center dot H2O-H2O2 buffer solution, 310 nm GaAs capping layers are removed and the InAs/AlAs quantum dots are observed by field-emission scanning electron microscopy. It is shown that as-fabricated quantum dots have a diameter of several tens of nanometers and a density of 10(10) cm(-2) order. The images taken by this means are comparable or slightly better than those of transmission electron microscopy. The undercut of the InAs/AlAs layer near the edges of mesas is detected and that verifies the reliability of the quantum dot images. The... (More)
- Self-assembled InAs/AlAs quantum dots embedded in a resonant tunneling diode device structure are grown by molecular beam epitaxy. Through the selective etching in a C6H8O7 center dot H2O-K3C6H5O7 center dot H2O-H2O2 buffer solution, 310 nm GaAs capping layers are removed and the InAs/AlAs quantum dots are observed by field-emission scanning electron microscopy. It is shown that as-fabricated quantum dots have a diameter of several tens of nanometers and a density of 10(10) cm(-2) order. The images taken by this means are comparable or slightly better than those of transmission electron microscopy. The undercut of the InAs/AlAs layer near the edges of mesas is detected and that verifies the reliability of the quantum dot images. The inhomogeneous oxidation of the upper AlAs barrier in H2O2 is also observed. By comparing the morphologies of the mesa edge adjacent regions and the rest areas of the sample, it is concluded that the physicochemical reaction introduced in this letter is diffusion limited. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1409042
- author
- Sun, Jie LU ; Zhou, Dayong ; Li, Ruoyuan ; Zhao, Chang ; Ye, Xiaoling ; Xu, Bo ; Chen, Yonghai and Wang, Zhanguo
- organization
- publishing date
- 2007
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- scanning electron microscopy, III-V semiconductors, quantum dots, selective etching
- in
- Modern Physics Letters B
- volume
- 21
- issue
- 14
- pages
- 859 - 866
- publisher
- World Scientific Publishing
- external identifiers
-
- wos:000251890300004
- scopus:34250208474
- ISSN
- 0217-9849
- DOI
- 10.1142/S0217984907013262
- language
- English
- LU publication?
- yes
- id
- be94420b-fbd7-41e9-a20a-fc93d2d59838 (old id 1409042)
- date added to LUP
- 2016-04-01 17:08:01
- date last changed
- 2022-01-29 00:33:52
@article{be94420b-fbd7-41e9-a20a-fc93d2d59838, abstract = {{Self-assembled InAs/AlAs quantum dots embedded in a resonant tunneling diode device structure are grown by molecular beam epitaxy. Through the selective etching in a C6H8O7 center dot H2O-K3C6H5O7 center dot H2O-H2O2 buffer solution, 310 nm GaAs capping layers are removed and the InAs/AlAs quantum dots are observed by field-emission scanning electron microscopy. It is shown that as-fabricated quantum dots have a diameter of several tens of nanometers and a density of 10(10) cm(-2) order. The images taken by this means are comparable or slightly better than those of transmission electron microscopy. The undercut of the InAs/AlAs layer near the edges of mesas is detected and that verifies the reliability of the quantum dot images. The inhomogeneous oxidation of the upper AlAs barrier in H2O2 is also observed. By comparing the morphologies of the mesa edge adjacent regions and the rest areas of the sample, it is concluded that the physicochemical reaction introduced in this letter is diffusion limited.}}, author = {{Sun, Jie and Zhou, Dayong and Li, Ruoyuan and Zhao, Chang and Ye, Xiaoling and Xu, Bo and Chen, Yonghai and Wang, Zhanguo}}, issn = {{0217-9849}}, keywords = {{scanning electron microscopy; III-V semiconductors; quantum dots; selective etching}}, language = {{eng}}, number = {{14}}, pages = {{859--866}}, publisher = {{World Scientific Publishing}}, series = {{Modern Physics Letters B}}, title = {{Scanning electron microscopy observation of in-device InAs/AlAs quantum dots by selective etching of capping layers}}, url = {{http://dx.doi.org/10.1142/S0217984907013262}}, doi = {{10.1142/S0217984907013262}}, volume = {{21}}, year = {{2007}}, }