Low temperature Ga surface diffusion from focused ion beam milled grooves.
(2009) In Nanotechnology 20(32).- Abstract
- Ga diffusion from focused ion beam (FIB) milled grooves has been studied using x-ray photoemission electron microscopy (XPEEM) and mirror electron microscopy (MEM). We analyze the surface chemistry of the FIB structures measuring the Ga presence in the top layers of the milled grooves and morphological defects inside the grooves. The Ga is initially strictly confined to the grooves. However, annealing at temperatures as low as 150 degrees C leads to rapid and significant Ga surface diffusion from the FIB structures. The out-diffused Ga forms a thin layer extending up to several microns laterally in a non-regular pattern. The diffusion is significantly enhanced at small crystallites at the edges of the grooves. We explain the general... (More)
- Ga diffusion from focused ion beam (FIB) milled grooves has been studied using x-ray photoemission electron microscopy (XPEEM) and mirror electron microscopy (MEM). We analyze the surface chemistry of the FIB structures measuring the Ga presence in the top layers of the milled grooves and morphological defects inside the grooves. The Ga is initially strictly confined to the grooves. However, annealing at temperatures as low as 150 degrees C leads to rapid and significant Ga surface diffusion from the FIB structures. The out-diffused Ga forms a thin layer extending up to several microns laterally in a non-regular pattern. The diffusion is significantly enhanced at small crystallites at the edges of the grooves. We explain the general behavior with an atomic scale model in which interstitial Ga in the milled areas diffuses out and substitutes silanol groups on the surface. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1452928
- author
- Mikkelsen, Anders LU ; Hilner, Emelie LU ; Andersen, Jesper N LU ; Ghatnekar-Nilsson, Sara LU ; Montelius, Lars LU and Zakharov, Alexei LU
- organization
- publishing date
- 2009
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nanotechnology
- volume
- 20
- issue
- 32
- article number
- 325304
- publisher
- IOP Publishing
- external identifiers
-
- wos:000268179700006
- pmid:19620748
- scopus:70249127234
- pmid:19620748
- ISSN
- 0957-4484
- DOI
- 10.1088/0957-4484/20/32/325304
- language
- English
- LU publication?
- yes
- id
- e7cd7437-3355-4a90-ab56-41be7a9f1306 (old id 1452928)
- date added to LUP
- 2016-04-01 12:37:22
- date last changed
- 2022-01-27 07:34:01
@article{e7cd7437-3355-4a90-ab56-41be7a9f1306,
abstract = {{Ga diffusion from focused ion beam (FIB) milled grooves has been studied using x-ray photoemission electron microscopy (XPEEM) and mirror electron microscopy (MEM). We analyze the surface chemistry of the FIB structures measuring the Ga presence in the top layers of the milled grooves and morphological defects inside the grooves. The Ga is initially strictly confined to the grooves. However, annealing at temperatures as low as 150 degrees C leads to rapid and significant Ga surface diffusion from the FIB structures. The out-diffused Ga forms a thin layer extending up to several microns laterally in a non-regular pattern. The diffusion is significantly enhanced at small crystallites at the edges of the grooves. We explain the general behavior with an atomic scale model in which interstitial Ga in the milled areas diffuses out and substitutes silanol groups on the surface.}},
author = {{Mikkelsen, Anders and Hilner, Emelie and Andersen, Jesper N and Ghatnekar-Nilsson, Sara and Montelius, Lars and Zakharov, Alexei}},
issn = {{0957-4484}},
language = {{eng}},
number = {{32}},
publisher = {{IOP Publishing}},
series = {{Nanotechnology}},
title = {{Low temperature Ga surface diffusion from focused ion beam milled grooves.}},
url = {{http://dx.doi.org/10.1088/0957-4484/20/32/325304}},
doi = {{10.1088/0957-4484/20/32/325304}},
volume = {{20}},
year = {{2009}},
}