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Selective optical doping to predict the performance and reveal the origin of photocurrent peaks in quantum dots-in-a-well infrared photodetectors

Hoglund, L. ; Holtz, P. O. ; Pettersson, Håkan LU ; Asplund, C. ; Wang, Q. ; Almqvist, S. ; Malm, H. ; Petrini, E. and Andersson, J. Y. (2009) International Conference on Quantum Structure Infrared Photodetector 52(6). p.272-275
Abstract
Resonant optical pumping across the band gap was used as artificial doping in InAs/In0.15Ga0.85As/GaAs quantum dots-in-a-well infrared photodetectors. Through efficient filling of the quantum dot energy levels by simultaneous optical pumping into the ground states and the excited states of the quantum dots, the response was increased by a factor of 10. Low temperature photocurrent peaks observed at 120 and 148 meV were identified as intersubband transitions emanating from the quantum dot ground state and the quantum dot excited state, respectively by a selective increase of the electron population in the different quantum dot energy levels. (C) 2009 Elsevier B.V. All rights reserved.
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author
; ; ; ; ; ; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
Optical pumping, Quantum dot, Detector, Infrared, QDIP, DWELL, Doping
host publication
Infrared Physics & Technology
volume
52
issue
6
pages
272 - 275
publisher
Elsevier
conference name
International Conference on Quantum Structure Infrared Photodetector
conference dates
2009-01-18 - 2009-01-23
external identifiers
  • wos:000273240700013
  • scopus:70649095339
ISSN
1350-4495
DOI
10.1016/j.infrared.2009.05.025
language
English
LU publication?
yes
id
6a335365-5479-4971-881c-f5df5e92fe9d (old id 1531585)
date added to LUP
2016-04-01 13:48:54
date last changed
2025-04-04 15:17:26
@inproceedings{6a335365-5479-4971-881c-f5df5e92fe9d,
  abstract     = {{Resonant optical pumping across the band gap was used as artificial doping in InAs/In0.15Ga0.85As/GaAs quantum dots-in-a-well infrared photodetectors. Through efficient filling of the quantum dot energy levels by simultaneous optical pumping into the ground states and the excited states of the quantum dots, the response was increased by a factor of 10. Low temperature photocurrent peaks observed at 120 and 148 meV were identified as intersubband transitions emanating from the quantum dot ground state and the quantum dot excited state, respectively by a selective increase of the electron population in the different quantum dot energy levels. (C) 2009 Elsevier B.V. All rights reserved.}},
  author       = {{Hoglund, L. and Holtz, P. O. and Pettersson, Håkan and Asplund, C. and Wang, Q. and Almqvist, S. and Malm, H. and Petrini, E. and Andersson, J. Y.}},
  booktitle    = {{Infrared Physics & Technology}},
  issn         = {{1350-4495}},
  keywords     = {{Optical pumping; Quantum dot; Detector; Infrared; QDIP; DWELL; Doping}},
  language     = {{eng}},
  number       = {{6}},
  pages        = {{272--275}},
  publisher    = {{Elsevier}},
  title        = {{Selective optical doping to predict the performance and reveal the origin of photocurrent peaks in quantum dots-in-a-well infrared photodetectors}},
  url          = {{http://dx.doi.org/10.1016/j.infrared.2009.05.025}},
  doi          = {{10.1016/j.infrared.2009.05.025}},
  volume       = {{52}},
  year         = {{2009}},
}