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Trivacancy-oxygen complex in silicon: Local vibrational mode characterization

Murin, L. I. ; Svensson, B. G. ; Lindström, Lennart LU ; Markevich, V. P. and Londos, C. A. (2009) 25th International Conference on Defects in Semiconductors 404(23-24). p.4568-4571
Abstract
FTIR study of the evolution of multivacancy-oxygen-related defects in the temperature range 100-350 degrees C in Czochralski-grown Si samples irradiated with different particles (10 MeV electrons and 5 MeV neutrons) has been carried out. Appearance of two absorption bands positioned at 833.4 and 842.4 cm(-1) has been found upon annealing of the divacancy related absorption band at 2767 cm(-1). The 833.4 cm(-1) band is assigned to a divacancy-oxygen defect. The 842.4 cm band is much more pronounced in neutron irradiated samples and we argue that it is related to a trivacancy-oxygen defect formed via interaction of mobile V-3 with O-i atoms. (C) 2009 Elsevier B.V. All rights reserved.
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author
; ; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
Oxygen, Radiation damage, Silicon, Infra-red absorption
host publication
Physica B: Condensed Matter
volume
404
issue
23-24
pages
4568 - 4571
publisher
Elsevier
conference name
25th International Conference on Defects in Semiconductors
conference location
St Petersburg, Russian Federation
conference dates
2009-07-20 - 2009-07-24
external identifiers
  • wos:000276029300019
  • scopus:74349108640
ISSN
0921-4526
DOI
10.1016/j.physb.2009.08.144
language
English
LU publication?
yes
id
49274ac3-2658-4a30-99a2-aa36db80bc4d (old id 1586347)
date added to LUP
2016-04-01 14:36:51
date last changed
2025-10-14 09:13:23
@inproceedings{49274ac3-2658-4a30-99a2-aa36db80bc4d,
  abstract     = {{FTIR study of the evolution of multivacancy-oxygen-related defects in the temperature range 100-350 degrees C in Czochralski-grown Si samples irradiated with different particles (10 MeV electrons and 5 MeV neutrons) has been carried out. Appearance of two absorption bands positioned at 833.4 and 842.4 cm(-1) has been found upon annealing of the divacancy related absorption band at 2767 cm(-1). The 833.4 cm(-1) band is assigned to a divacancy-oxygen defect. The 842.4 cm band is much more pronounced in neutron irradiated samples and we argue that it is related to a trivacancy-oxygen defect formed via interaction of mobile V-3 with O-i atoms. (C) 2009 Elsevier B.V. All rights reserved.}},
  author       = {{Murin, L. I. and Svensson, B. G. and Lindström, Lennart and Markevich, V. P. and Londos, C. A.}},
  booktitle    = {{Physica B: Condensed Matter}},
  issn         = {{0921-4526}},
  keywords     = {{Oxygen; Radiation damage; Silicon; Infra-red absorption}},
  language     = {{eng}},
  number       = {{23-24}},
  pages        = {{4568--4571}},
  publisher    = {{Elsevier}},
  title        = {{Trivacancy-oxygen complex in silicon: Local vibrational mode characterization}},
  url          = {{http://dx.doi.org/10.1016/j.physb.2009.08.144}},
  doi          = {{10.1016/j.physb.2009.08.144}},
  volume       = {{404}},
  year         = {{2009}},
}