Lund University Publications

Ambipolar Behavior of Ge-Intercalated Graphene : Interfacial Dynamics and Possible Applications

• Mark

Abstract

For the realization of graphene-based electronic and optic devices, the functionalization of this material becomes essential. Graphene doping through intercalation and tuning the chemical potential is one among other promising concepts. Intercalation of germanium is particularly interesting in view of its ambipolar doping behavior. Both p- and n-type doped graphene and their doping levels were identified by x-ray photoelectron emission microscopy (XPEEM), low-energy electron microscopy (LEEM), and angle-resolved photoemission microspectroscopy (μ-ARPES). The absolute amount of intercalated Ge was determined to be roughly 1 ML and 2 MLs for n- and p-phases, respectively. For the samples in the present study, we utilized the transition... (More)

For the realization of graphene-based electronic and optic devices, the functionalization of this material becomes essential. Graphene doping through intercalation and tuning the chemical potential is one among other promising concepts. Intercalation of germanium is particularly interesting in view of its ambipolar doping behavior. Both p- and n-type doped graphene and their doping levels were identified by x-ray photoelectron emission microscopy (XPEEM), low-energy electron microscopy (LEEM), and angle-resolved photoemission microspectroscopy (μ-ARPES). The absolute amount of intercalated Ge was determined to be roughly 1 ML and 2 MLs for n- and p-phases, respectively. For the samples in the present study, we utilized the transition from 2 ML to 1 ML Ge via a mix phase after a high temperature annealing. Concrete implementation of mutual distribution of p- and n-phases depends on the temperature, mobility of Ge atoms in the second intercalated layer, and cooling/heating protocol, and can be nicely followed live in low-energy electron microscope (LEEM) during heating/cooling below 500°C. The process has a significant temperature hysteresis, which is an indication of the first-order phase transition. The enhanced Ge diffusion in the second layer can be suitable for tailoring ultrashort junction lengths so that pseudo-spin mismatch can be used in future electronic concepts. Another application can utilize the negative relative refractive index at the p–n boundary and can find possible applications in focusing electron optics.

(Less)