Correlated development of a (2 x 2) reconstruction and a charge accumulation layer on the InAs(111)-Bi surface
(2011) In Surface Science 605(1-2). p.12-17- Abstract
- We have studied the formation of a Bi-induced (2 x 2) reconstruction on the InAs(111)B surface. In connection to the development of the (2 x 2) reconstruction, a two dimensional charge accumulation layer located at the bottom of the InAs conduction band appears as seen through a photoemission structure at the Fermi level. Not well ordered Bi layers do not induce a charge accumulation. The Bi-induced reconstruction reduces the polarization of the pristine surface and changes the initial charge distribution. InAsBi alloying occurs below the surface where Bi acts as charge donor leading to the charge accumulation layer. (C) 2010 Elsevier B.V. All rights reserved.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1868819
- author
- Szamota-Leandersson, Karolina ; Leandersson, Mats LU ; Gothelid, Mats and Karlsson, Ulf O.
- organization
- publishing date
- 2011
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Adatoms, Indium arsenide, Bismuth, Photoemission, 2 DEG
- in
- Surface Science
- volume
- 605
- issue
- 1-2
- pages
- 12 - 17
- publisher
- Elsevier
- external identifiers
-
- wos:000286021000003
- scopus:78649703757
- ISSN
- 0039-6028
- DOI
- 10.1016/j.susc.2010.09.015
- language
- English
- LU publication?
- yes
- id
- 3ff719eb-75a0-4aef-aaa4-825aff53de54 (old id 1868819)
- date added to LUP
- 2016-04-01 14:50:18
- date last changed
- 2022-02-19 21:09:04
@article{3ff719eb-75a0-4aef-aaa4-825aff53de54, abstract = {{We have studied the formation of a Bi-induced (2 x 2) reconstruction on the InAs(111)B surface. In connection to the development of the (2 x 2) reconstruction, a two dimensional charge accumulation layer located at the bottom of the InAs conduction band appears as seen through a photoemission structure at the Fermi level. Not well ordered Bi layers do not induce a charge accumulation. The Bi-induced reconstruction reduces the polarization of the pristine surface and changes the initial charge distribution. InAsBi alloying occurs below the surface where Bi acts as charge donor leading to the charge accumulation layer. (C) 2010 Elsevier B.V. All rights reserved.}}, author = {{Szamota-Leandersson, Karolina and Leandersson, Mats and Gothelid, Mats and Karlsson, Ulf O.}}, issn = {{0039-6028}}, keywords = {{Adatoms; Indium arsenide; Bismuth; Photoemission; 2 DEG}}, language = {{eng}}, number = {{1-2}}, pages = {{12--17}}, publisher = {{Elsevier}}, series = {{Surface Science}}, title = {{Correlated development of a (2 x 2) reconstruction and a charge accumulation layer on the InAs(111)-Bi surface}}, url = {{http://dx.doi.org/10.1016/j.susc.2010.09.015}}, doi = {{10.1016/j.susc.2010.09.015}}, volume = {{605}}, year = {{2011}}, }