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Epitaxial stabilization of thin films of the frustrated Ge-based spinels

Vasiukov, Denis M. LU orcid ; Kareev, Mikhail ; Wen, Fangdi ; Wu, Liang ; Shafer, Padraic ; Arenholz, Elke ; Liu, Xiaoran and Chakhalian, Jak (2021) In Physical Review Materials 5(6).
Abstract

Frustrated magnets can host numerous exotic many-body quantum and topological phenomena. GeNi2O4 is a three-dimensional S=1 frustrated magnet with an unusual two-stage transition to the two-dimensional antiferromagnetic ground state, while GeCu2O4 is a high-pressure phase with a strongly tetragonally elongated spinel structure and magnetic lattice formed by S=1/2 CuO2 linear chains with frustrated interchain exchange interactions and exotic magnetic behavior. Here, we report on the thin-film epitaxial stabilization of these two compounds. The developed growth mode, surface morphology, crystal structure, and copper valence state were characterized by in situ reflection high-energy electron diffraction, atomic force microscopy, x-ray... (More)

Frustrated magnets can host numerous exotic many-body quantum and topological phenomena. GeNi2O4 is a three-dimensional S=1 frustrated magnet with an unusual two-stage transition to the two-dimensional antiferromagnetic ground state, while GeCu2O4 is a high-pressure phase with a strongly tetragonally elongated spinel structure and magnetic lattice formed by S=1/2 CuO2 linear chains with frustrated interchain exchange interactions and exotic magnetic behavior. Here, we report on the thin-film epitaxial stabilization of these two compounds. The developed growth mode, surface morphology, crystal structure, and copper valence state were characterized by in situ reflection high-energy electron diffraction, atomic force microscopy, x-ray reflectivity, x-ray diffraction, x-ray photoelectron spectroscopy, and resonant x-ray absorption spectroscopy. Our results pave an alternative route to the comprehensive investigation of the puzzling magnetic properties of these compounds and the exploration of emergent features driven by strain.

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author
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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review Materials
volume
5
issue
6
article number
064419
publisher
American Physical Society
external identifiers
  • scopus:85109094046
ISSN
2475-9953
DOI
10.1103/PhysRevMaterials.5.064419
language
English
LU publication?
yes
id
18a4e7fc-e334-4624-929d-57c65a39708f
date added to LUP
2021-08-16 15:07:56
date last changed
2023-11-08 17:31:08
@article{18a4e7fc-e334-4624-929d-57c65a39708f,
  abstract     = {{<p>Frustrated magnets can host numerous exotic many-body quantum and topological phenomena. GeNi2O4 is a three-dimensional S=1 frustrated magnet with an unusual two-stage transition to the two-dimensional antiferromagnetic ground state, while GeCu2O4 is a high-pressure phase with a strongly tetragonally elongated spinel structure and magnetic lattice formed by S=1/2 CuO2 linear chains with frustrated interchain exchange interactions and exotic magnetic behavior. Here, we report on the thin-film epitaxial stabilization of these two compounds. The developed growth mode, surface morphology, crystal structure, and copper valence state were characterized by in situ reflection high-energy electron diffraction, atomic force microscopy, x-ray reflectivity, x-ray diffraction, x-ray photoelectron spectroscopy, and resonant x-ray absorption spectroscopy. Our results pave an alternative route to the comprehensive investigation of the puzzling magnetic properties of these compounds and the exploration of emergent features driven by strain. </p>}},
  author       = {{Vasiukov, Denis M. and Kareev, Mikhail and Wen, Fangdi and Wu, Liang and Shafer, Padraic and Arenholz, Elke and Liu, Xiaoran and Chakhalian, Jak}},
  issn         = {{2475-9953}},
  language     = {{eng}},
  number       = {{6}},
  publisher    = {{American Physical Society}},
  series       = {{Physical Review Materials}},
  title        = {{Epitaxial stabilization of thin films of the frustrated Ge-based spinels}},
  url          = {{http://dx.doi.org/10.1103/PhysRevMaterials.5.064419}},
  doi          = {{10.1103/PhysRevMaterials.5.064419}},
  volume       = {{5}},
  year         = {{2021}},
}