Carbon Nanotube Field Effect Transistors with Suspended Graphene Gates.
(2011) In Nano Letters 11. p.3569-3575- Abstract
- Novel field effect transistors with suspended graphene gates are demonstrated. By incorporating mechanical motion of the gate electrode, it is possible to improve the switching characteristics compared to a static gate, as shown by a combination of experimental measurements and numerical simulations. The mechanical motion of the graphene gate is confirmed by using atomic force microscopy to directly measure the electrostatic deflection. The device geometry investigated here can also provide a sensitive measurement technique for detecting high-frequency motion of suspended membranes as required, e.g., for mass sensing.
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https://lup.lub.lu.se/record/2150993
- author
- organization
- publishing date
- 2011
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nano Letters
- volume
- 11
- pages
- 3569 - 3575
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- wos:000294790200010
- pmid:21848317
- scopus:80052819859
- pmid:21848317
- ISSN
- 1530-6992
- DOI
- 10.1021/nl201280q
- language
- English
- LU publication?
- yes
- id
- cc8ee197-057d-48af-8903-969695917939 (old id 2150993)
- date added to LUP
- 2016-04-01 14:40:37
- date last changed
- 2022-01-28 01:58:02
@article{cc8ee197-057d-48af-8903-969695917939, abstract = {{Novel field effect transistors with suspended graphene gates are demonstrated. By incorporating mechanical motion of the gate electrode, it is possible to improve the switching characteristics compared to a static gate, as shown by a combination of experimental measurements and numerical simulations. The mechanical motion of the graphene gate is confirmed by using atomic force microscopy to directly measure the electrostatic deflection. The device geometry investigated here can also provide a sensitive measurement technique for detecting high-frequency motion of suspended membranes as required, e.g., for mass sensing.}}, author = {{Svensson, Johannes and Lindahl, Niklas and Yun, Hoyeol and Seo, Miri and Midtvedt, Daniel and Tarakanov, Yury and Lindvall, Niclas and Nerushev, Oleg and Kinaret, Jari and Lee, Sangwook and Campbell, Eleanor E B}}, issn = {{1530-6992}}, language = {{eng}}, pages = {{3569--3575}}, publisher = {{The American Chemical Society (ACS)}}, series = {{Nano Letters}}, title = {{Carbon Nanotube Field Effect Transistors with Suspended Graphene Gates.}}, url = {{http://dx.doi.org/10.1021/nl201280q}}, doi = {{10.1021/nl201280q}}, volume = {{11}}, year = {{2011}}, }