Epitaxial silicide formation in the Mg/Si(111) system
(1993) In Surface Science 289(3). p.290-296- Abstract
The silicide formation has been studied in the Mg/Si(111) system by low energy electron diffraction (LEED) and photoelectron spectroscopy. It has been found that an epitaxial Mg2Si silicide is responsible for the ( 2 3√3 × 2 3√3)R30° reconstru system. The thickness of the silicide is limited due to the very low formation temperature for this silicide. The Fermi level is positioned 0.59 ± 0.06 eV above the valence band maximum in the Si substrate and the valence band maximum in the epitaxial silicide is positioned 0.3 ± 0.1 eV below the Fermi level.
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https://lup.lub.lu.se/record/23d4cb26-e860-43e4-ae8e-72b06a5e0468
- author
- Wigren, C. ; Andersen, J. N. LU ; Nyholm, R. LU and Karlsson, U. O.
- organization
- publishing date
- 1993-06-01
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Surface Science
- volume
- 289
- issue
- 3
- pages
- 7 pages
- publisher
- Elsevier
- external identifiers
-
- scopus:0027609487
- ISSN
- 0039-6028
- DOI
- 10.1016/0039-6028(93)90661-3
- language
- English
- LU publication?
- yes
- id
- 23d4cb26-e860-43e4-ae8e-72b06a5e0468
- date added to LUP
- 2016-04-29 11:22:02
- date last changed
- 2020-12-27 04:32:03
@article{23d4cb26-e860-43e4-ae8e-72b06a5e0468, abstract = {{<p>The silicide formation has been studied in the Mg/Si(111) system by low energy electron diffraction (LEED) and photoelectron spectroscopy. It has been found that an epitaxial Mg<sub>2</sub>Si silicide is responsible for the ( 2 3√3 × 2 3√3)R30° reconstru system. The thickness of the silicide is limited due to the very low formation temperature for this silicide. The Fermi level is positioned 0.59 ± 0.06 eV above the valence band maximum in the Si substrate and the valence band maximum in the epitaxial silicide is positioned 0.3 ± 0.1 eV below the Fermi level.</p>}}, author = {{Wigren, C. and Andersen, J. N. and Nyholm, R. and Karlsson, U. O.}}, issn = {{0039-6028}}, language = {{eng}}, month = {{06}}, number = {{3}}, pages = {{290--296}}, publisher = {{Elsevier}}, series = {{Surface Science}}, title = {{Epitaxial silicide formation in the Mg/Si(111) system}}, url = {{http://dx.doi.org/10.1016/0039-6028(93)90661-3}}, doi = {{10.1016/0039-6028(93)90661-3}}, volume = {{289}}, year = {{1993}}, }