Postgrowth annealing of (Ga,Mn) As under As capping: An alternative way to increase T-C
(2005) In Applied Physics Letters 86(11).- Abstract
- In situ postgrowth annealing of (Ga,Mn)As layers under As capping is adequate for achieving high Curie temperatures (T-C) in a similar way as ex situ annealing in air or in N-2 atmosphere practiced earlier. Thus, the first efforts give an increase of T-C from 68 to 145 K after 2 h annealing at 180 degrees C. These data, in combination with lattice parameter determinations and photoemission results, show that the As capping acts as an efficient sink for diffusing Mn interstitials.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/247227
- author
- Adell, Martin LU ; Ilver, L ; Kanski, J ; Stanciu, V ; Svedlindh, P ; Sadowski, J ; Domagala, JZ ; Terki, F ; Hernandez, C and Charar, S
- organization
- publishing date
- 2005
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 86
- issue
- 11
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000228050700056
- scopus:18044365211
- ISSN
- 0003-6951
- DOI
- 10.1063/1.1875746
- language
- English
- LU publication?
- yes
- id
- ba13e25a-466c-45b6-a942-bcf500b8d23a (old id 247227)
- date added to LUP
- 2016-04-01 12:21:43
- date last changed
- 2022-03-31 14:53:34
@article{ba13e25a-466c-45b6-a942-bcf500b8d23a, abstract = {{In situ postgrowth annealing of (Ga,Mn)As layers under As capping is adequate for achieving high Curie temperatures (T-C) in a similar way as ex situ annealing in air or in N-2 atmosphere practiced earlier. Thus, the first efforts give an increase of T-C from 68 to 145 K after 2 h annealing at 180 degrees C. These data, in combination with lattice parameter determinations and photoemission results, show that the As capping acts as an efficient sink for diffusing Mn interstitials.}}, author = {{Adell, Martin and Ilver, L and Kanski, J and Stanciu, V and Svedlindh, P and Sadowski, J and Domagala, JZ and Terki, F and Hernandez, C and Charar, S}}, issn = {{0003-6951}}, language = {{eng}}, number = {{11}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Applied Physics Letters}}, title = {{Postgrowth annealing of (Ga,Mn) As under As capping: An alternative way to increase T-C}}, url = {{http://dx.doi.org/10.1063/1.1875746}}, doi = {{10.1063/1.1875746}}, volume = {{86}}, year = {{2005}}, }