Evidence for capture of holes into resonant states in boron-doped silicon
(2004) In Applied Physics Reviews 96(9). p.4970-4975- Abstract
- The variation of hole population in the resonant states of B-doped Si excited by sequences of short electric-field pulses has been investigated by the technique of time-resolved step-scan far-infrared spectroscopy. From the variation of the p(3/2) absorptions, we find that the hole population in the ground state decreases continuously with the sequential electric pulses, as a result of the breakdown delay and hole accumulation in long-lived excited states. The measured time-varying spectra of the p(1/2) series have been analyzed and attributed to a significant variation of the hole population in the resonant states. We have also observed a new absorption line at 676 cm(-1) which is probably caused by the electric-field induced mixing of... (More)
- The variation of hole population in the resonant states of B-doped Si excited by sequences of short electric-field pulses has been investigated by the technique of time-resolved step-scan far-infrared spectroscopy. From the variation of the p(3/2) absorptions, we find that the hole population in the ground state decreases continuously with the sequential electric pulses, as a result of the breakdown delay and hole accumulation in long-lived excited states. The measured time-varying spectra of the p(1/2) series have been analyzed and attributed to a significant variation of the hole population in the resonant states. We have also observed a new absorption line at 676 cm(-1) which is probably caused by the electric-field induced mixing of the resonant states. (C) 2004 American Institute of Physics. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/262754
- author
- Yen, ST ; Tulupenko, VN ; Cheng, ES ; Chung, PK ; Lee, CP ; Dalakyan, AT and Chao, Koung-An LU
- organization
- publishing date
- 2004
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Reviews
- volume
- 96
- issue
- 9
- pages
- 4970 - 4975
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000224799300038
- scopus:9744246778
- ISSN
- 1931-9401
- DOI
- 10.1063/1.1795985
- language
- English
- LU publication?
- yes
- id
- 557941da-ed8a-4f05-9093-7dfed578863c (old id 262754)
- date added to LUP
- 2016-04-01 12:10:22
- date last changed
- 2022-01-26 23:53:00
@article{557941da-ed8a-4f05-9093-7dfed578863c,
abstract = {{The variation of hole population in the resonant states of B-doped Si excited by sequences of short electric-field pulses has been investigated by the technique of time-resolved step-scan far-infrared spectroscopy. From the variation of the p(3/2) absorptions, we find that the hole population in the ground state decreases continuously with the sequential electric pulses, as a result of the breakdown delay and hole accumulation in long-lived excited states. The measured time-varying spectra of the p(1/2) series have been analyzed and attributed to a significant variation of the hole population in the resonant states. We have also observed a new absorption line at 676 cm(-1) which is probably caused by the electric-field induced mixing of the resonant states. (C) 2004 American Institute of Physics.}},
author = {{Yen, ST and Tulupenko, VN and Cheng, ES and Chung, PK and Lee, CP and Dalakyan, AT and Chao, Koung-An}},
issn = {{1931-9401}},
language = {{eng}},
number = {{9}},
pages = {{4970--4975}},
publisher = {{American Institute of Physics (AIP)}},
series = {{Applied Physics Reviews}},
title = {{Evidence for capture of holes into resonant states in boron-doped silicon}},
url = {{http://dx.doi.org/10.1063/1.1795985}},
doi = {{10.1063/1.1795985}},
volume = {{96}},
year = {{2004}},
}