Diode-like characteristics of nanometer-scale semiconductor channels with a broken symmetry
(2004) Eleventh International Conference on Modulated Semiconductor Structures 21(2-4). p.1116-1120- Abstract
- We present a new type of nanometer-scale semiconductor nonlinear device, called self-switching device (SSD). The device was realized by simply etching insulating grooves into a semiconductor, between which a narrow channel with a broken symmetry was formed. Because of the asymmetry in the channel boundary, an applied voltage V not only changes the potential profile along the channel direction, but also either widens or narrows the effective channel width depending on the sign of V. This results in a diode-like current-voltage characteristic but without the use of any doping junction or barrier structure. The turn-on voltage can also be widely tuned from virtually 0 to more than 10 V by simply adjusting the channel width. Furthermore, only... (More)
- We present a new type of nanometer-scale semiconductor nonlinear device, called self-switching device (SSD). The device was realized by simply etching insulating grooves into a semiconductor, between which a narrow channel with a broken symmetry was formed. Because of the asymmetry in the channel boundary, an applied voltage V not only changes the potential profile along the channel direction, but also either widens or narrows the effective channel width depending on the sign of V. This results in a diode-like current-voltage characteristic but without the use of any doping junction or barrier structure. The turn-on voltage can also be widely tuned from virtually 0 to more than 10 V by simply adjusting the channel width. Furthermore, only one lithography step was needed to fabricate SSDs. We used two different material systems, InGaAs-InP and InGaAs-InAlAs, to realize SSDs and the results at room temperature were compared. We also show that by adding a third terminal to an SSD as a gate, the turn-on voltage of the device could be tuned by the gate bias and the device functions either as a tunable diode or as a transistor. (C) 2003 Elsevier B.V. All rights reserved. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/280649
- author
- Song, AM ; Maximov, Ivan LU ; Missous, M and Seifert, Werner LU
- organization
- publishing date
- 2004
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- InGaAs-InAlAs, nonlinear, nanodevice, symmetry, InGaAs-InP
- host publication
- Proceedings of the Eleventh International Conference on Modulated Semiconductor Structures (Physica E: Low-dimensional Systems and Nanostructures)
- volume
- 21
- issue
- 2-4
- pages
- 1116 - 1120
- publisher
- Elsevier
- conference name
- Eleventh International Conference on Modulated Semiconductor Structures
- conference location
- Nara, Japan
- conference dates
- 2003-07-14 - 2003-07-18
- external identifiers
-
- wos:000220873300200
- scopus:1642352582
- ISSN
- 1386-9477
- DOI
- 10.1016/j.physe.2003.11.190
- language
- English
- LU publication?
- yes
- id
- d5b8977c-a84f-4d7b-813f-6643e62d00f3 (old id 280649)
- date added to LUP
- 2016-04-01 15:49:49
- date last changed
- 2022-01-28 07:22:24
@inproceedings{d5b8977c-a84f-4d7b-813f-6643e62d00f3, abstract = {{We present a new type of nanometer-scale semiconductor nonlinear device, called self-switching device (SSD). The device was realized by simply etching insulating grooves into a semiconductor, between which a narrow channel with a broken symmetry was formed. Because of the asymmetry in the channel boundary, an applied voltage V not only changes the potential profile along the channel direction, but also either widens or narrows the effective channel width depending on the sign of V. This results in a diode-like current-voltage characteristic but without the use of any doping junction or barrier structure. The turn-on voltage can also be widely tuned from virtually 0 to more than 10 V by simply adjusting the channel width. Furthermore, only one lithography step was needed to fabricate SSDs. We used two different material systems, InGaAs-InP and InGaAs-InAlAs, to realize SSDs and the results at room temperature were compared. We also show that by adding a third terminal to an SSD as a gate, the turn-on voltage of the device could be tuned by the gate bias and the device functions either as a tunable diode or as a transistor. (C) 2003 Elsevier B.V. All rights reserved.}}, author = {{Song, AM and Maximov, Ivan and Missous, M and Seifert, Werner}}, booktitle = {{Proceedings of the Eleventh International Conference on Modulated Semiconductor Structures (Physica E: Low-dimensional Systems and Nanostructures)}}, issn = {{1386-9477}}, keywords = {{InGaAs-InAlAs; nonlinear; nanodevice; symmetry; InGaAs-InP}}, language = {{eng}}, number = {{2-4}}, pages = {{1116--1120}}, publisher = {{Elsevier}}, title = {{Diode-like characteristics of nanometer-scale semiconductor channels with a broken symmetry}}, url = {{http://dx.doi.org/10.1016/j.physe.2003.11.190}}, doi = {{10.1016/j.physe.2003.11.190}}, volume = {{21}}, year = {{2004}}, }