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Electrical properties of InAs1-xSbx and InSb nanowires grown by molecular beam epitaxy

Thelander, Claes LU ; Caroff, Philippe ; Plissard, Sebastien and Dick Thelander, Kimberly LU (2012) In Applied Physics Letters 100(23).
Abstract
Results of electrical characterization of Au nucleated InAs1-xSbx nanowires grown by molecular beam epitaxy are reported. An almost doubling of the extracted field effect mobility compared to reference InAs nanowires is observed for a Sb content of x = 0.13. Pure InSb nanowires on the other hand show considerably lower, and strongly diameter dependent, mobility values. Finally, InAs of wurtzite crystal phase overgrown with an InAs1-xSbx shell is found to have a substantial positive shift in threshold voltage compared to reference nanowires. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4726037]
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author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
100
issue
23
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000305089900039
  • scopus:84862137591
ISSN
0003-6951
DOI
10.1063/1.4726037
language
English
LU publication?
yes
id
03a29e0f-aa9e-4035-b1fc-e39b5fac37f9 (old id 2892266)
date added to LUP
2016-04-01 10:14:51
date last changed
2025-04-04 15:28:08
@article{03a29e0f-aa9e-4035-b1fc-e39b5fac37f9,
  abstract     = {{Results of electrical characterization of Au nucleated InAs1-xSbx nanowires grown by molecular beam epitaxy are reported. An almost doubling of the extracted field effect mobility compared to reference InAs nanowires is observed for a Sb content of x = 0.13. Pure InSb nanowires on the other hand show considerably lower, and strongly diameter dependent, mobility values. Finally, InAs of wurtzite crystal phase overgrown with an InAs1-xSbx shell is found to have a substantial positive shift in threshold voltage compared to reference nanowires. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4726037]}},
  author       = {{Thelander, Claes and Caroff, Philippe and Plissard, Sebastien and Dick Thelander, Kimberly}},
  issn         = {{0003-6951}},
  language     = {{eng}},
  number       = {{23}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Letters}},
  title        = {{Electrical properties of InAs1-xSbx and InSb nanowires grown by molecular beam epitaxy}},
  url          = {{https://lup.lub.lu.se/search/files/1687248/2968541.pdf}},
  doi          = {{10.1063/1.4726037}},
  volume       = {{100}},
  year         = {{2012}},
}