Quadruples of Ge dots grown on patterned Si surfaces
(2003) In Journal of Crystal Growth 259(3). p.262-266- Abstract
- In this paper, we present the results of Ge deposition on a pre-pattemed Si surface. By partially overgrowing nanometer-sized electron beam-induced carbon deposits, faceted pits form at the Si surface and well-defined arrays of self-assembled Ge dots can be grown site selectively in and around those. Typically, four closely spaced Ge islands are formed by preferential nucleation around the pits. By varying the pattern of C-deposits a manifold of different arrays can be obtained. (C) 2003 Elsevier B.V. All rights reserved.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/296460
- author
- Borgström, Magnus LU ; Zela, Vilma LU and Seifert, Werner LU
- organization
- publishing date
- 2003
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- chemical vapor deposition processes, nanostructures, nucleation
- in
- Journal of Crystal Growth
- volume
- 259
- issue
- 3
- pages
- 262 - 266
- publisher
- Elsevier
- external identifiers
-
- wos:000186283500007
- scopus:0142063395
- ISSN
- 0022-0248
- DOI
- 10.1016/j.jcrysgro.2003.07.020
- language
- English
- LU publication?
- yes
- id
- 2cfd4a61-1247-41b4-9225-a47fd86b81a4 (old id 296460)
- date added to LUP
- 2016-04-01 16:08:20
- date last changed
- 2022-01-28 17:33:39
@article{2cfd4a61-1247-41b4-9225-a47fd86b81a4, abstract = {{In this paper, we present the results of Ge deposition on a pre-pattemed Si surface. By partially overgrowing nanometer-sized electron beam-induced carbon deposits, faceted pits form at the Si surface and well-defined arrays of self-assembled Ge dots can be grown site selectively in and around those. Typically, four closely spaced Ge islands are formed by preferential nucleation around the pits. By varying the pattern of C-deposits a manifold of different arrays can be obtained. (C) 2003 Elsevier B.V. All rights reserved.}}, author = {{Borgström, Magnus and Zela, Vilma and Seifert, Werner}}, issn = {{0022-0248}}, keywords = {{chemical vapor deposition processes; nanostructures; nucleation}}, language = {{eng}}, number = {{3}}, pages = {{262--266}}, publisher = {{Elsevier}}, series = {{Journal of Crystal Growth}}, title = {{Quadruples of Ge dots grown on patterned Si surfaces}}, url = {{http://dx.doi.org/10.1016/j.jcrysgro.2003.07.020}}, doi = {{10.1016/j.jcrysgro.2003.07.020}}, volume = {{259}}, year = {{2003}}, }