Surface degradation of InxGa1-xN thin films by sputter-anneal processing: A scanning photoemission microscope study
(2003) In Applied Physics Reviews 94(9). p.5820-5825- Abstract
- The effects of nitrogen ion sputtering and thermal anneal processing on the surface electronic structure of the ternary III-V semiconductor In0.12Ga0.88N have been studied using scanning photoemission microscopy. No phase separation of the material is observed for annealing temperatures up to 650degreesC. However, samples annealed at 700degreesC for 5 h show clear evidence of phase separation. Furthermore, annealing at these temperatures with the sample surface directly exposed to ultrahigh vacuum produces a surface greatly deficient in In and with considerable surface roughness. This can be circumvented by using a sacrificial sample in physical contact with the film to artificially increase the local vapor pressure of Ga, In, and N during... (More)
- The effects of nitrogen ion sputtering and thermal anneal processing on the surface electronic structure of the ternary III-V semiconductor In0.12Ga0.88N have been studied using scanning photoemission microscopy. No phase separation of the material is observed for annealing temperatures up to 650degreesC. However, samples annealed at 700degreesC for 5 h show clear evidence of phase separation. Furthermore, annealing at these temperatures with the sample surface directly exposed to ultrahigh vacuum produces a surface greatly deficient in In and with considerable surface roughness. This can be circumvented by using a sacrificial sample in physical contact with the film to artificially increase the local vapor pressure of Ga, In, and N during annealing. (C) 2003 American Institute of Physics. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/297924
- author
- Downes, JE ; Smith, KE ; Matsuura, AY ; Lindau, Ingolf LU ; Iliopoulos, E and Moustakas, TD
- organization
- publishing date
- 2003
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Reviews
- volume
- 94
- issue
- 9
- pages
- 5820 - 5825
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000186138600056
- scopus:0242636852
- ISSN
- 1931-9401
- DOI
- 10.1063/1.1617356
- language
- English
- LU publication?
- yes
- id
- 4ea5f08b-bd4e-4ff8-b536-971a18389393 (old id 297924)
- date added to LUP
- 2016-04-01 11:43:26
- date last changed
- 2022-01-26 17:17:38
@article{4ea5f08b-bd4e-4ff8-b536-971a18389393, abstract = {{The effects of nitrogen ion sputtering and thermal anneal processing on the surface electronic structure of the ternary III-V semiconductor In0.12Ga0.88N have been studied using scanning photoemission microscopy. No phase separation of the material is observed for annealing temperatures up to 650degreesC. However, samples annealed at 700degreesC for 5 h show clear evidence of phase separation. Furthermore, annealing at these temperatures with the sample surface directly exposed to ultrahigh vacuum produces a surface greatly deficient in In and with considerable surface roughness. This can be circumvented by using a sacrificial sample in physical contact with the film to artificially increase the local vapor pressure of Ga, In, and N during annealing. (C) 2003 American Institute of Physics.}}, author = {{Downes, JE and Smith, KE and Matsuura, AY and Lindau, Ingolf and Iliopoulos, E and Moustakas, TD}}, issn = {{1931-9401}}, language = {{eng}}, number = {{9}}, pages = {{5820--5825}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Applied Physics Reviews}}, title = {{Surface degradation of InxGa1-xN thin films by sputter-anneal processing: A scanning photoemission microscope study}}, url = {{http://dx.doi.org/10.1063/1.1617356}}, doi = {{10.1063/1.1617356}}, volume = {{94}}, year = {{2003}}, }