Direct evidence of defect annihilation during structural relaxation of amorphous indium phosphide
(2003) In Physical Review B (Condensed Matter and Materials Physics) 68(11: 115204).- Abstract
- Extended x-ray absorption fine structure measurements have been used to characterize the low-temperature, thermally induced structural relaxation of amorphous InP. We show reductions in both chemical and structural disorder associated with homopolar and heteropolar bonding, respectively, are operative during structural relaxation of this amorphous compound semiconductor. The latter is analogous to that observed in the amorphous elemental semiconductors Ge and Si. Though a reduction in homopolar bonding accompanies structural relaxation, the fully relaxed, minimum-energy configuration of the amorphous phase still retains chemical disorder.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/298597
- author
- Azevedo, G D ; Glover, Chris LU ; Ridgway, M C ; Yu, K M and Foran, G J
- organization
- publishing date
- 2003
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Physical Review B (Condensed Matter and Materials Physics)
- volume
- 68
- issue
- 11: 115204
- publisher
- American Physical Society
- external identifiers
-
- wos:000185829300046
- scopus:0242679713
- ISSN
- 1098-0121
- DOI
- 10.1103/PhysRevB.68.115204
- language
- English
- LU publication?
- yes
- id
- 4f11d5fd-3822-4cb7-94a9-4ee32e1458ea (old id 298597)
- alternative location
- http://link.aps.org/abstract/PRB/v68/e115204
- date added to LUP
- 2016-04-01 15:34:03
- date last changed
- 2022-01-28 06:00:00
@article{4f11d5fd-3822-4cb7-94a9-4ee32e1458ea,
abstract = {{Extended x-ray absorption fine structure measurements have been used to characterize the low-temperature, thermally induced structural relaxation of amorphous InP. We show reductions in both chemical and structural disorder associated with homopolar and heteropolar bonding, respectively, are operative during structural relaxation of this amorphous compound semiconductor. The latter is analogous to that observed in the amorphous elemental semiconductors Ge and Si. Though a reduction in homopolar bonding accompanies structural relaxation, the fully relaxed, minimum-energy configuration of the amorphous phase still retains chemical disorder.}},
author = {{Azevedo, G D and Glover, Chris and Ridgway, M C and Yu, K M and Foran, G J}},
issn = {{1098-0121}},
language = {{eng}},
number = {{11: 115204}},
publisher = {{American Physical Society}},
series = {{Physical Review B (Condensed Matter and Materials Physics)}},
title = {{Direct evidence of defect annihilation during structural relaxation of amorphous indium phosphide}},
url = {{http://dx.doi.org/10.1103/PhysRevB.68.115204}},
doi = {{10.1103/PhysRevB.68.115204}},
volume = {{68}},
year = {{2003}},
}