Resonant interaction between localized and extended vibrational modes in Si: O-18 under pressure
(2003) In Physical Review Letters 90(9).- Abstract
- The interaction between localized and extended vibrational modes in solids is of central importance in understanding how local vibrational modes decay into phonons. Interstitial oxygen (O-i) in silicon is a model system for studying such interactions. Using hydrostatic pressure, we have brought the antisymmetric stretch mode of O-18(i) in silicon into resonance with the second harmonic of the O-18(i) resonant mode. Infrared spectroscopy was used to observe an anticrossing between these two vibrational modes at pressures near 4 GPa. A model of the interaction between these modes produced excellent agreement with the experimentally observed frequencies and linewidths.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/316815
- author
- Hsu, L ; McCluskey, MD and Lindström, Lennart LU
- organization
- publishing date
- 2003
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Physical Review Letters
- volume
- 90
- issue
- 9
- article number
- 095505
- publisher
- American Physical Society
- external identifiers
-
- wos:000181443300031
- pmid:12689236
- scopus:84900813037
- ISSN
- 1079-7114
- DOI
- 10.1103/PhysRevLett.90.095505
- language
- English
- LU publication?
- yes
- id
- 29d1570f-6007-49eb-be56-2cad9dd543dd (old id 316815)
- date added to LUP
- 2016-04-01 11:36:57
- date last changed
- 2022-04-20 19:19:21
@article{29d1570f-6007-49eb-be56-2cad9dd543dd, abstract = {{The interaction between localized and extended vibrational modes in solids is of central importance in understanding how local vibrational modes decay into phonons. Interstitial oxygen (O-i) in silicon is a model system for studying such interactions. Using hydrostatic pressure, we have brought the antisymmetric stretch mode of O-18(i) in silicon into resonance with the second harmonic of the O-18(i) resonant mode. Infrared spectroscopy was used to observe an anticrossing between these two vibrational modes at pressures near 4 GPa. A model of the interaction between these modes produced excellent agreement with the experimentally observed frequencies and linewidths.}}, author = {{Hsu, L and McCluskey, MD and Lindström, Lennart}}, issn = {{1079-7114}}, language = {{eng}}, number = {{9}}, publisher = {{American Physical Society}}, series = {{Physical Review Letters}}, title = {{Resonant interaction between localized and extended vibrational modes in Si: O-18 under pressure}}, url = {{http://dx.doi.org/10.1103/PhysRevLett.90.095505}}, doi = {{10.1103/PhysRevLett.90.095505}}, volume = {{90}}, year = {{2003}}, }