Structure of amorphous silicon investigated by EXAFS
(2003) In Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms 199. p.195-199- Abstract
- The local structure of amorphous Si (a-Si) formed by ion implantation has been investigated at the Si K edge with extended X-ray absorption fine structure spectroscopy (EXAFS). The first four cumulants of the interatomic distance distribution have been determined using the Cumulant method. The structural parameters (bondlength, coordination number and Debye-Waller factor) compared favorably to previous EXAFS investigations of a-Si prepared by sputtering methods, however, in the ion implanted case, no asymmetry was detectable in the radial distribution function for a-Si. The present results are in excellent agreement with recent high resolution X-ray diffraction measurements of a-Si, but were found to differ in regards the ion dose... (More)
- The local structure of amorphous Si (a-Si) formed by ion implantation has been investigated at the Si K edge with extended X-ray absorption fine structure spectroscopy (EXAFS). The first four cumulants of the interatomic distance distribution have been determined using the Cumulant method. The structural parameters (bondlength, coordination number and Debye-Waller factor) compared favorably to previous EXAFS investigations of a-Si prepared by sputtering methods, however, in the ion implanted case, no asymmetry was detectable in the radial distribution function for a-Si. The present results are in excellent agreement with recent high resolution X-ray diffraction measurements of a-Si, but were found to differ in regards the ion dose dependent structure of another Group IV semiconductor: a-Ge. Specifically, no ion dose dependence of the a-Si structural parameters were observed. (C) 2002 Elsevier Science B.V. All rights reserved. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/318512
- author
- Glover, Chris LU ; Foran, GJ and Ridgway, MC
- organization
- publishing date
- 2003
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- amorphous semiconductors, extended X-ray absorption fine structure, spectroscopy, silicon
- in
- Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
- volume
- 199
- pages
- 195 - 199
- publisher
- Elsevier
- external identifiers
-
- wos:000180925400039
- scopus:0037243215
- ISSN
- 0168-583X
- DOI
- 10.1016/S0168-583X(02)01544-6
- language
- English
- LU publication?
- yes
- id
- fd50b747-7911-47f3-be6d-48820bb75668 (old id 318512)
- date added to LUP
- 2016-04-01 16:12:18
- date last changed
- 2022-04-15 02:54:20
@article{fd50b747-7911-47f3-be6d-48820bb75668, abstract = {{The local structure of amorphous Si (a-Si) formed by ion implantation has been investigated at the Si K edge with extended X-ray absorption fine structure spectroscopy (EXAFS). The first four cumulants of the interatomic distance distribution have been determined using the Cumulant method. The structural parameters (bondlength, coordination number and Debye-Waller factor) compared favorably to previous EXAFS investigations of a-Si prepared by sputtering methods, however, in the ion implanted case, no asymmetry was detectable in the radial distribution function for a-Si. The present results are in excellent agreement with recent high resolution X-ray diffraction measurements of a-Si, but were found to differ in regards the ion dose dependent structure of another Group IV semiconductor: a-Ge. Specifically, no ion dose dependence of the a-Si structural parameters were observed. (C) 2002 Elsevier Science B.V. All rights reserved.}}, author = {{Glover, Chris and Foran, GJ and Ridgway, MC}}, issn = {{0168-583X}}, keywords = {{amorphous semiconductors; extended X-ray absorption fine structure; spectroscopy; silicon}}, language = {{eng}}, pages = {{195--199}}, publisher = {{Elsevier}}, series = {{Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms}}, title = {{Structure of amorphous silicon investigated by EXAFS}}, url = {{http://dx.doi.org/10.1016/S0168-583X(02)01544-6}}, doi = {{10.1016/S0168-583X(02)01544-6}}, volume = {{199}}, year = {{2003}}, }