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Ligand hyperfine interaction at the neutral silicon vacancy in 4H- and 6H-SiC

Wagner, M ; Thinh, NQ ; Son, NT ; Chen, WM ; Janzen, E ; Baranov, PG ; Mokhov, EN ; Hallin, C and Lindström, Lennart LU (2002) In Physical Review B (Condensed Matter and Materials Physics) 66(15).
Abstract
The silicon vacancy in its neutral charge state (V-Si) has been unambiguously identified in 4H- and 6H-SiC. This was achieved by observation of ligand hyperfine interaction with the four carbon atoms in the nearest-neighbor shell and the twelve silicon atoms in the next-nearest-neighbor shell surrounding the vacancy. The complete hyperfine tensors have been determined for the V-Si(0) center residing at all inequivalent lattice sites in the two polytypes. These are compared with the parameters previously obtained for the negatively charged silicon vacancy.
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author
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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B (Condensed Matter and Materials Physics)
volume
66
issue
15
article number
155214
publisher
American Physical Society
external identifiers
  • wos:000179080800079
  • scopus:0038195883
ISSN
1098-0121
DOI
10.1103/PhysRevB.66.155214
language
English
LU publication?
yes
id
875e6d4b-7056-4826-9740-051cc7de7269 (old id 324105)
date added to LUP
2016-04-01 16:10:39
date last changed
2022-01-28 17:50:03
@article{875e6d4b-7056-4826-9740-051cc7de7269,
  abstract     = {{The silicon vacancy in its neutral charge state (V-Si) has been unambiguously identified in 4H- and 6H-SiC. This was achieved by observation of ligand hyperfine interaction with the four carbon atoms in the nearest-neighbor shell and the twelve silicon atoms in the next-nearest-neighbor shell surrounding the vacancy. The complete hyperfine tensors have been determined for the V-Si(0) center residing at all inequivalent lattice sites in the two polytypes. These are compared with the parameters previously obtained for the negatively charged silicon vacancy.}},
  author       = {{Wagner, M and Thinh, NQ and Son, NT and Chen, WM and Janzen, E and Baranov, PG and Mokhov, EN and Hallin, C and Lindström, Lennart}},
  issn         = {{1098-0121}},
  language     = {{eng}},
  number       = {{15}},
  publisher    = {{American Physical Society}},
  series       = {{Physical Review B (Condensed Matter and Materials Physics)}},
  title        = {{Ligand hyperfine interaction at the neutral silicon vacancy in 4H- and 6H-SiC}},
  url          = {{http://dx.doi.org/10.1103/PhysRevB.66.155214}},
  doi          = {{10.1103/PhysRevB.66.155214}},
  volume       = {{66}},
  year         = {{2002}},
}