Structural characterization of amorphised InAs with synchrotron radiation
(2002) 15th International Conference on Ion-Beam Analysis (IBA-15) 190. p.851-855- Abstract
- Extended X-ray absorption fine structure measurements have been utilized to determine the structural parameters of InAs amorphised by ion implantation. Relative to crystalline standards, increases in bond length and Debye-Walter factor were apparent. Our results indicate that a total coordination number of four atoms, as observed in the crystalline phase, is retained in the amorphous material. Furthermore, homopolar bonding, forbidden in the crystalline phase, is present in the amorphous material and, apparently, in amorphous III-V semiconductors in general.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/335457
- author
- Azevedo, GD ; Ridgway, MC ; Yu, KM ; Glover, Chris LU and Foran, GJ
- organization
- publishing date
- 2002
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- InAs, amorphous solids, ion implantation, EXAFS
- host publication
- Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- volume
- 190
- pages
- 851 - 855
- publisher
- Elsevier
- conference name
- 15th International Conference on Ion-Beam Analysis (IBA-15)
- conference location
- Cairns, Australia
- conference dates
- 2001-07-15 - 2001-07-20
- external identifiers
-
- wos:000176108800171
- scopus:0036568970
- ISSN
- 0168-583X
- DOI
- 10.1016/S0168-583X(02)00471-8
- language
- English
- LU publication?
- yes
- id
- fcbb3f91-a029-48df-bc29-5fbd53188e6d (old id 335457)
- date added to LUP
- 2016-04-01 15:41:56
- date last changed
- 2022-01-28 06:38:30
@inproceedings{fcbb3f91-a029-48df-bc29-5fbd53188e6d, abstract = {{Extended X-ray absorption fine structure measurements have been utilized to determine the structural parameters of InAs amorphised by ion implantation. Relative to crystalline standards, increases in bond length and Debye-Walter factor were apparent. Our results indicate that a total coordination number of four atoms, as observed in the crystalline phase, is retained in the amorphous material. Furthermore, homopolar bonding, forbidden in the crystalline phase, is present in the amorphous material and, apparently, in amorphous III-V semiconductors in general.}}, author = {{Azevedo, GD and Ridgway, MC and Yu, KM and Glover, Chris and Foran, GJ}}, booktitle = {{Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms}}, issn = {{0168-583X}}, keywords = {{InAs; amorphous solids; ion implantation; EXAFS}}, language = {{eng}}, pages = {{851--855}}, publisher = {{Elsevier}}, title = {{Structural characterization of amorphised InAs with synchrotron radiation}}, url = {{http://dx.doi.org/10.1016/S0168-583X(02)00471-8}}, doi = {{10.1016/S0168-583X(02)00471-8}}, volume = {{190}}, year = {{2002}}, }