Diode and transistor behaviors of three-terminal ballistic junctions
(2002) In Applied Physics Letters 80(5). p.853-855- Abstract
- We propose new applications of three-terminal ballistic junctions (TBJs) in nanoelectronics. It is found that for a TBJ with one of its three branch contacts, say the right branch contact, being grounded, the output voltage, V-c, from the central branch as a function of the voltage, Vl, applied to the left branch shows a diode characteristic: V-c approximately follows Vl linearly when Vl is negative, and saturates at a small positive value when Vl becomes positive. It is also found that the saturation level of V-c as well as the threshold value of Vl, beyond which V-c saturates, can be modulated by application of a voltage, V-r, to the right branch contact of the TBJ. Thus, the TBJ can also be used as a transistor. TBJ diodes and TBJ... (More)
- We propose new applications of three-terminal ballistic junctions (TBJs) in nanoelectronics. It is found that for a TBJ with one of its three branch contacts, say the right branch contact, being grounded, the output voltage, V-c, from the central branch as a function of the voltage, Vl, applied to the left branch shows a diode characteristic: V-c approximately follows Vl linearly when Vl is negative, and saturates at a small positive value when Vl becomes positive. It is also found that the saturation level of V-c as well as the threshold value of Vl, beyond which V-c saturates, can be modulated by application of a voltage, V-r, to the right branch contact of the TBJ. Thus, the TBJ can also be used as a transistor. TBJ diodes and TBJ transistors with dimensions on the order of sub 100 nm, or much less, can be made from standard high-quality electronic materials with state-of-the-art nanofabrication technology. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/344262
- author
- Xu, Hongqi LU
- organization
- publishing date
- 2002
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- transistors, semiconductor diodes, semiconductor device models, nanotechnology
- in
- Applied Physics Letters
- volume
- 80
- issue
- 5
- pages
- 853 - 855
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000173617700050
- scopus:79956021220
- ISSN
- 0003-6951
- DOI
- 10.1063/1.1447316
- language
- English
- LU publication?
- yes
- id
- a2bfc7fe-699f-4c5b-91b2-15e3d72ad5c5 (old id 344262)
- date added to LUP
- 2016-04-01 12:12:44
- date last changed
- 2022-01-27 00:27:29
@article{a2bfc7fe-699f-4c5b-91b2-15e3d72ad5c5,
abstract = {{We propose new applications of three-terminal ballistic junctions (TBJs) in nanoelectronics. It is found that for a TBJ with one of its three branch contacts, say the right branch contact, being grounded, the output voltage, V-c, from the central branch as a function of the voltage, Vl, applied to the left branch shows a diode characteristic: V-c approximately follows Vl linearly when Vl is negative, and saturates at a small positive value when Vl becomes positive. It is also found that the saturation level of V-c as well as the threshold value of Vl, beyond which V-c saturates, can be modulated by application of a voltage, V-r, to the right branch contact of the TBJ. Thus, the TBJ can also be used as a transistor. TBJ diodes and TBJ transistors with dimensions on the order of sub 100 nm, or much less, can be made from standard high-quality electronic materials with state-of-the-art nanofabrication technology.}},
author = {{Xu, Hongqi}},
issn = {{0003-6951}},
keywords = {{transistors; semiconductor diodes; semiconductor device models; nanotechnology}},
language = {{eng}},
number = {{5}},
pages = {{853--855}},
publisher = {{American Institute of Physics (AIP)}},
series = {{Applied Physics Letters}},
title = {{Diode and transistor behaviors of three-terminal ballistic junctions}},
url = {{http://dx.doi.org/10.1063/1.1447316}},
doi = {{10.1063/1.1447316}},
volume = {{80}},
year = {{2002}},
}