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Low-temperature irradiation effects in lithium orthosilicates

Feldbach, E. ; Kotlov, A. ; Kudryavtseva, I. ; Liblik, P. ; Lushchik, A. ; Maaroos, A. ; Martinson, Indrek LU ; Nagirnyi, V. and Vasil'chenko, E. (2006) Radiation Effects in Insulators - Proceedings of the 13th International Conference on Radiation Effects in Insulators (REI-2005) 250. p.159-163
Abstract
The emission spectra of lithium orthosilicates (Li4SiO4) ceramics have been measured in the range of 1.8-5.8 eV under irradiation by 6-30 eV photons or 1-30 keV electrons at 6-300 K. The tunnel recombination phosphorescence, as well as luminescence, stimulated by 1.5-2.5 eV photons has been detected in the sample preliminarily irradiated at 6 or 80 K. The main peaks of thermally stimulated luminescence (TSL) in the irradiated ceramics have been observed at 72, 118 and 265 K. The creation spectra of the 118 K TSL peak, as well as the excitation spectrum of photostimulated luminescence (PSL) span the region of the intrinsic absorption of a lithium orthosilicate (9-30 eV). The intensity of PSL and the TSL peaks in Li4SiO4 ceramics prepared in... (More)
The emission spectra of lithium orthosilicates (Li4SiO4) ceramics have been measured in the range of 1.8-5.8 eV under irradiation by 6-30 eV photons or 1-30 keV electrons at 6-300 K. The tunnel recombination phosphorescence, as well as luminescence, stimulated by 1.5-2.5 eV photons has been detected in the sample preliminarily irradiated at 6 or 80 K. The main peaks of thermally stimulated luminescence (TSL) in the irradiated ceramics have been observed at 72, 118 and 265 K. The creation spectra of the 118 K TSL peak, as well as the excitation spectrum of photostimulated luminescence (PSL) span the region of the intrinsic absorption of a lithium orthosilicate (9-30 eV). The intensity of PSL and the TSL peaks in Li4SiO4 ceramics prepared in hydrogen/argon atmosphere is several times lower than that in the mainly investigated Li4SiO4 ceramics prepared in the atmosphere of dry argon. The optical characteristics of Li4SiO4 are compared with the ones known for Li2O and SiO2. Low-temperature luminescent methods are promising for the investigation of electron-hole processes and radiation defects serving as the traps for tritium released in D-T fusion reactor blanket systems. (c) 2006 Elsevier B.V. All rights reserved. (Less)
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author
; ; ; ; ; ; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
radiation defect, Li4SiO4, luminescence
host publication
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
volume
250
pages
159 - 163
publisher
Elsevier
conference name
Radiation Effects in Insulators - Proceedings of the 13th International Conference on Radiation Effects in Insulators (REI-2005)
conference location
Santa Fe, New Mexico, United States
conference dates
2005-08-28 - 2005-09-02
external identifiers
  • wos:000239883500031
  • scopus:33746547462
ISSN
0168-583X
DOI
10.1016/j.nimb.2006.04.100
language
English
LU publication?
yes
id
8d93f82c-b3ad-403d-a958-c30321ef74b3 (old id 397296)
date added to LUP
2016-04-01 16:28:53
date last changed
2022-01-28 20:01:23
@inproceedings{8d93f82c-b3ad-403d-a958-c30321ef74b3,
  abstract     = {{The emission spectra of lithium orthosilicates (Li4SiO4) ceramics have been measured in the range of 1.8-5.8 eV under irradiation by 6-30 eV photons or 1-30 keV electrons at 6-300 K. The tunnel recombination phosphorescence, as well as luminescence, stimulated by 1.5-2.5 eV photons has been detected in the sample preliminarily irradiated at 6 or 80 K. The main peaks of thermally stimulated luminescence (TSL) in the irradiated ceramics have been observed at 72, 118 and 265 K. The creation spectra of the 118 K TSL peak, as well as the excitation spectrum of photostimulated luminescence (PSL) span the region of the intrinsic absorption of a lithium orthosilicate (9-30 eV). The intensity of PSL and the TSL peaks in Li4SiO4 ceramics prepared in hydrogen/argon atmosphere is several times lower than that in the mainly investigated Li4SiO4 ceramics prepared in the atmosphere of dry argon. The optical characteristics of Li4SiO4 are compared with the ones known for Li2O and SiO2. Low-temperature luminescent methods are promising for the investigation of electron-hole processes and radiation defects serving as the traps for tritium released in D-T fusion reactor blanket systems. (c) 2006 Elsevier B.V. All rights reserved.}},
  author       = {{Feldbach, E. and Kotlov, A. and Kudryavtseva, I. and Liblik, P. and Lushchik, A. and Maaroos, A. and Martinson, Indrek and Nagirnyi, V. and Vasil'chenko, E.}},
  booktitle    = {{Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms}},
  issn         = {{0168-583X}},
  keywords     = {{radiation defect; Li4SiO4; luminescence}},
  language     = {{eng}},
  pages        = {{159--163}},
  publisher    = {{Elsevier}},
  title        = {{Low-temperature irradiation effects in lithium orthosilicates}},
  url          = {{http://dx.doi.org/10.1016/j.nimb.2006.04.100}},
  doi          = {{10.1016/j.nimb.2006.04.100}},
  volume       = {{250}},
  year         = {{2006}},
}