Synthesis and characterization of cobalt silicide films on silicon
(2006) Seventeenth International Conference on Ion Beam Analysis 249. p.532-535- Abstract
- Cobalt silicide has emerged as a leading contact material in silicon technology due to its low resistivity, high stability and small lattice mismatch. In this study, 0.2-0.4 mu m thick Co films were deposited on Si(100) wafers by RF magnetron sputtering at room temperature, and annealed at temperatures from 600 to 900 degrees C in vacuum. As-deposited and annealed samples were characterized by Rutherford backscattering spectrometry (RBS), nuclear reaction analysis (NRA), X-ray diffraction (XRD) and scanning electron microscopy (SEM). Although the Si substrates were sputter cleaned before the deposition, all the samples showed a thin oxide layer at the Si/Co interfaces. Annealing up to 700 degrees C did not alter the composition at the... (More)
- Cobalt silicide has emerged as a leading contact material in silicon technology due to its low resistivity, high stability and small lattice mismatch. In this study, 0.2-0.4 mu m thick Co films were deposited on Si(100) wafers by RF magnetron sputtering at room temperature, and annealed at temperatures from 600 to 900 degrees C in vacuum. As-deposited and annealed samples were characterized by Rutherford backscattering spectrometry (RBS), nuclear reaction analysis (NRA), X-ray diffraction (XRD) and scanning electron microscopy (SEM). Although the Si substrates were sputter cleaned before the deposition, all the samples showed a thin oxide layer at the Si/Co interfaces. Annealing up to 700 degrees C did not alter the composition at the interface except small amount Co diffusion into Si. Annealing at 800 degrees C promotes the evaporation of the oxides from the interface and, as a result, clean CoSi2 films were formed. Although the interface appeared to be sharp within the RBS resolution after high temperature annealing, the surface topography was relatively rough with varying size of crystal grains. (c) 2006 Elsevier B.V. All rights reserved. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/398268
- author
- Joensson, C T ; Maximov, Ivan LU ; Whitlow, Harry J LU ; Shutthanandan, V. ; Saraf, L. ; McCready, D. E. ; Arey, B. W. ; Zhang, Y. and Thevuthasan, S.
- organization
- publishing date
- 2006
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- magnetron sputtering, cobalt silicide, NRA, RBS
- host publication
- Ion Beam Analysis - Proceedings of the Seventeenth International Conference on Ion Beam Analysis (Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms)
- volume
- 249
- pages
- 532 - 535
- publisher
- Elsevier
- conference name
- Seventeenth International Conference on Ion Beam Analysis
- conference location
- Sevilla, Spain
- conference dates
- 2005-06-26 - 2005-07-01
- external identifiers
-
- wos:000239545000132
- scopus:33745857349
- ISSN
- 0168-583X
- DOI
- 10.1016/j.nimb.2006.03.046
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Nuclear Physics (Faculty of Technology) (011013007)
- id
- 6318833f-cf04-49c5-91e6-bd918b4af69b (old id 398268)
- date added to LUP
- 2016-04-01 16:18:19
- date last changed
- 2022-01-28 18:44:54
@inproceedings{6318833f-cf04-49c5-91e6-bd918b4af69b, abstract = {{Cobalt silicide has emerged as a leading contact material in silicon technology due to its low resistivity, high stability and small lattice mismatch. In this study, 0.2-0.4 mu m thick Co films were deposited on Si(100) wafers by RF magnetron sputtering at room temperature, and annealed at temperatures from 600 to 900 degrees C in vacuum. As-deposited and annealed samples were characterized by Rutherford backscattering spectrometry (RBS), nuclear reaction analysis (NRA), X-ray diffraction (XRD) and scanning electron microscopy (SEM). Although the Si substrates were sputter cleaned before the deposition, all the samples showed a thin oxide layer at the Si/Co interfaces. Annealing up to 700 degrees C did not alter the composition at the interface except small amount Co diffusion into Si. Annealing at 800 degrees C promotes the evaporation of the oxides from the interface and, as a result, clean CoSi2 films were formed. Although the interface appeared to be sharp within the RBS resolution after high temperature annealing, the surface topography was relatively rough with varying size of crystal grains. (c) 2006 Elsevier B.V. All rights reserved.}}, author = {{Joensson, C T and Maximov, Ivan and Whitlow, Harry J and Shutthanandan, V. and Saraf, L. and McCready, D. E. and Arey, B. W. and Zhang, Y. and Thevuthasan, S.}}, booktitle = {{Ion Beam Analysis - Proceedings of the Seventeenth International Conference on Ion Beam Analysis (Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms)}}, issn = {{0168-583X}}, keywords = {{magnetron sputtering; cobalt silicide; NRA; RBS}}, language = {{eng}}, pages = {{532--535}}, publisher = {{Elsevier}}, title = {{Synthesis and characterization of cobalt silicide films on silicon}}, url = {{http://dx.doi.org/10.1016/j.nimb.2006.03.046}}, doi = {{10.1016/j.nimb.2006.03.046}}, volume = {{249}}, year = {{2006}}, }