Effects of the Spin-Orbit Interaction on Transport and Optical Properties of III-V Semiconductor Quantum Wells
(2000)- Abstract
- Effects of the intrinsic electron spin-orbit interaction on transport and optical properties of III-V semiconductor quantum wells have been studied theoretically.
It is shown that due to crystal anisotropy of this interaction, the weak localization magnetoresistance in a magnetic field parallel to interfaces is very sensitive to the epitaxy growth direction and also to the orientation of the magnetic field with respect to the crystal axes.
Spin-orbit effects on the resonant Raman scattering from intrasubband electronic excitations have been investigated. We demonstrate that the spin-orbit interaction leads to the so-called "spin-spin" and "spin-charge" quantum interference of Raman amplitudes. The... (More) - Effects of the intrinsic electron spin-orbit interaction on transport and optical properties of III-V semiconductor quantum wells have been studied theoretically.
It is shown that due to crystal anisotropy of this interaction, the weak localization magnetoresistance in a magnetic field parallel to interfaces is very sensitive to the epitaxy growth direction and also to the orientation of the magnetic field with respect to the crystal axes.
Spin-orbit effects on the resonant Raman scattering from intrasubband electronic excitations have been investigated. We demonstrate that the spin-orbit interaction leads to the so-called "spin-spin" and "spin-charge" quantum interference of Raman amplitudes. The interference manifests itself in an asymmetry of the spin-flip and non-spin-flip Raman spectra with respect to the directions of circular polarizations of the incident and the scattered photons. In the case of resonance with a heavy-hole subband, the polarization asymmetry of the spin-flip spectrum can be detected only if the heavy and light-hole subbands are hybridized. Experimental conditions and selection rules for observation of the spin-charge interference have been analysed.
Finally, we have studied the spatial and temporal evolution of an inhomogeneous spin distribution created by a focused laser pulse in a magnetic field applied parallel to a quantum well. Instead of the conventional exponential relaxation typical of a homogeneous spin distribution, we have found that the shape of the spin packet oscillates in time and space, as a result of the interplay between the spin-orbit interaction and the magnetic field. The amplitude of the oscillations depends on the direction, as well as on the strength of the magnetic field. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/41101
- author
- Froltsov, Vladimir LU
- supervisor
- opponent
-
- Eriksson, Olle
- organization
- publishing date
- 2000
- type
- Thesis
- publication status
- published
- subject
- keywords
- spin-orbit interaction, quantum well, III-V, Raman scattering, magnetoresistance, weak localization, spin distribution, magnetic field, Fysik, Physics, Fysicumarkivet A:2000:Froltsov, Halvledarfysik, Semiconductory physics, semiconductor
- pages
- 90 pages
- publisher
- Division of Solid State Theory, Department of Physics, University of Lund, Sölvegatan 14A, SE-223 62 Lund
- defense location
- Sal F, Department of Physics
- defense date
- 2000-10-19 13:15:00
- ISBN
- 91-7874-099-1
- language
- English
- LU publication?
- yes
- id
- 5b0c1849-5c48-40ca-abd7-223863c6624e (old id 41101)
- date added to LUP
- 2016-04-04 11:48:20
- date last changed
- 2018-11-21 21:07:19
@phdthesis{5b0c1849-5c48-40ca-abd7-223863c6624e,
abstract = {{Effects of the intrinsic electron spin-orbit interaction on transport and optical properties of III-V semiconductor quantum wells have been studied theoretically.<br/><br>
<br/><br>
It is shown that due to crystal anisotropy of this interaction, the weak localization magnetoresistance in a magnetic field parallel to interfaces is very sensitive to the epitaxy growth direction and also to the orientation of the magnetic field with respect to the crystal axes.<br/><br>
<br/><br>
Spin-orbit effects on the resonant Raman scattering from intrasubband electronic excitations have been investigated. We demonstrate that the spin-orbit interaction leads to the so-called "spin-spin" and "spin-charge" quantum interference of Raman amplitudes. The interference manifests itself in an asymmetry of the spin-flip and non-spin-flip Raman spectra with respect to the directions of circular polarizations of the incident and the scattered photons. In the case of resonance with a heavy-hole subband, the polarization asymmetry of the spin-flip spectrum can be detected only if the heavy and light-hole subbands are hybridized. Experimental conditions and selection rules for observation of the spin-charge interference have been analysed.<br/><br>
<br/><br>
Finally, we have studied the spatial and temporal evolution of an inhomogeneous spin distribution created by a focused laser pulse in a magnetic field applied parallel to a quantum well. Instead of the conventional exponential relaxation typical of a homogeneous spin distribution, we have found that the shape of the spin packet oscillates in time and space, as a result of the interplay between the spin-orbit interaction and the magnetic field. The amplitude of the oscillations depends on the direction, as well as on the strength of the magnetic field.}},
author = {{Froltsov, Vladimir}},
isbn = {{91-7874-099-1}},
keywords = {{spin-orbit interaction; quantum well; III-V; Raman scattering; magnetoresistance; weak localization; spin distribution; magnetic field; Fysik; Physics; Fysicumarkivet A:2000:Froltsov; Halvledarfysik; Semiconductory physics; semiconductor}},
language = {{eng}},
publisher = {{Division of Solid State Theory, Department of Physics, University of Lund, Sölvegatan 14A, SE-223 62 Lund}},
school = {{Lund University}},
title = {{Effects of the Spin-Orbit Interaction on Transport and Optical Properties of III-V Semiconductor Quantum Wells}},
year = {{2000}},
}