Skip to main content

Lund University Publications

LUND UNIVERSITY LIBRARIES

Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study

Coletti, C. ; Forti, S. ; Principi, A. ; Emtsev, K. V. ; Zakharov, Alexei LU ; Daniels, K. M. ; Daas, B. K. ; Chandrashekhar, M. V. S. ; Ouisse, T. and Chaussende, D. , et al. (2013) In Physical Review B (Condensed Matter and Materials Physics) 88(15).
Abstract
In recent times, trilayer graphene has attracted wide attention owing to its stacking and electric-field-dependent electronic properties. However, a direct and well-resolved experimental visualization of its band structure has not yet been reported. In this paper, we present angle-resolved photoemission spectroscopy data which show with high resolution the electronic band structure of trilayer graphene obtained on alpha-SiC(0001) and beta-SiC(111) via hydrogen intercalation. Electronic bands obtained from tight-binding calculations are fitted to the experimental data to extract the interatomic hopping parameters for Bernal and rhombohedral stacked trilayers. Low-energy electron microscopy measurements demonstrate that the trilayer domains... (More)
In recent times, trilayer graphene has attracted wide attention owing to its stacking and electric-field-dependent electronic properties. However, a direct and well-resolved experimental visualization of its band structure has not yet been reported. In this paper, we present angle-resolved photoemission spectroscopy data which show with high resolution the electronic band structure of trilayer graphene obtained on alpha-SiC(0001) and beta-SiC(111) via hydrogen intercalation. Electronic bands obtained from tight-binding calculations are fitted to the experimental data to extract the interatomic hopping parameters for Bernal and rhombohedral stacked trilayers. Low-energy electron microscopy measurements demonstrate that the trilayer domains extend over areas of tens of square micrometers, suggesting the feasibility of exploiting this material in electronic and photonic devices. Furthermore, our results suggest that, on SiC substrates, the occurrence of a rhombohedral stacked trilayer is significantly higher than in natural bulk graphite. (Less)
Please use this url to cite or link to this publication:
author
; ; ; ; ; ; ; ; and , et al. (More)
; ; ; ; ; ; ; ; ; ; ; and (Less)
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review B (Condensed Matter and Materials Physics)
volume
88
issue
15
article number
155439
publisher
American Physical Society
external identifiers
  • wos:000326272000005
  • scopus:84887082814
ISSN
1098-0121
DOI
10.1103/PhysRevB.88.155439
language
English
LU publication?
yes
id
b78b8ff1-3843-4d60-b6fd-2cf977fe4b5f (old id 4212723)
date added to LUP
2016-04-01 14:36:02
date last changed
2022-04-22 04:13:19
@article{b78b8ff1-3843-4d60-b6fd-2cf977fe4b5f,
  abstract     = {{In recent times, trilayer graphene has attracted wide attention owing to its stacking and electric-field-dependent electronic properties. However, a direct and well-resolved experimental visualization of its band structure has not yet been reported. In this paper, we present angle-resolved photoemission spectroscopy data which show with high resolution the electronic band structure of trilayer graphene obtained on alpha-SiC(0001) and beta-SiC(111) via hydrogen intercalation. Electronic bands obtained from tight-binding calculations are fitted to the experimental data to extract the interatomic hopping parameters for Bernal and rhombohedral stacked trilayers. Low-energy electron microscopy measurements demonstrate that the trilayer domains extend over areas of tens of square micrometers, suggesting the feasibility of exploiting this material in electronic and photonic devices. Furthermore, our results suggest that, on SiC substrates, the occurrence of a rhombohedral stacked trilayer is significantly higher than in natural bulk graphite.}},
  author       = {{Coletti, C. and Forti, S. and Principi, A. and Emtsev, K. V. and Zakharov, Alexei and Daniels, K. M. and Daas, B. K. and Chandrashekhar, M. V. S. and Ouisse, T. and Chaussende, D. and MacDonald, A. H. and Polini, M. and Starke, U.}},
  issn         = {{1098-0121}},
  language     = {{eng}},
  number       = {{15}},
  publisher    = {{American Physical Society}},
  series       = {{Physical Review B (Condensed Matter and Materials Physics)}},
  title        = {{Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study}},
  url          = {{http://dx.doi.org/10.1103/PhysRevB.88.155439}},
  doi          = {{10.1103/PhysRevB.88.155439}},
  volume       = {{88}},
  year         = {{2013}},
}