Junction Engineering in Nanostructured Optoelectronic Devices
(2018)- Abstract
- Semiconductor nanowires have proven to be promising building blocks for next-generation optoelectronic devices. The nanometric dimensions of nanowires provides strain relaxation capability, thus enabling the heteroepitaxy of III-V materials on silicon, as well as providing the possibility of realizing optoelectronic devices with lattice-mismatched material combinations. The subwavelength dimensions of nanowires and their large surface-to-volume ratio can enable nanowires to enhance optical absorption. The above-mentioned properties make nanowires/nanostructures potential candidates for the realization of efficient and low-cost optoelectronics.
In this work we have fabricated vertical arrays of InP nanowire p-n junctions to... (More) - Semiconductor nanowires have proven to be promising building blocks for next-generation optoelectronic devices. The nanometric dimensions of nanowires provides strain relaxation capability, thus enabling the heteroepitaxy of III-V materials on silicon, as well as providing the possibility of realizing optoelectronic devices with lattice-mismatched material combinations. The subwavelength dimensions of nanowires and their large surface-to-volume ratio can enable nanowires to enhance optical absorption. The above-mentioned properties make nanowires/nanostructures potential candidates for the realization of efficient and low-cost optoelectronics.
In this work we have fabricated vertical arrays of InP nanowire p-n junctions to quantitatively evaluate the p-doping in nanowires using the capacitance-voltage method, fabricated and characterized vertical arrays of nanowire photovoltaic devices, and photodetectors in InP material system, as well as fabricating and characterizing nanostructured GaN-based light emitting diodes. We have developed a novel characterization method by engineering the p-i-n junctions in InP core-shell nanowires which enabled us to perform a reasonable comparative study of absorption between vertically and laterally oriented nanowire photovoltaic devices, studied the effect of junction position on the performance of InP axial p-i-n photodetectors/solar cells, and realized nanostructured (Al)(In)GaN UV, blue, green and red light emitting diodes enabled by junction placement on the c crystal plane. (Less)
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https://lup.lub.lu.se/record/4acb8c01-2985-45b5-a295-72e9c366efd6
- author
- Nowzari, Ali LU
- supervisor
- opponent
-
- Professor Anand, Srinivasan, KTH, Stockholm
- organization
- publishing date
- 2018-09-18
- type
- Thesis
- publication status
- published
- subject
- keywords
- Nanowire, Solar cell, Photodetector, Light Emitting Diode, Doping Evaluation, Fysicumarkivet A:2018:Nowzari
- pages
- 78 pages
- publisher
- Division of Solid State Physics, Lund University, P.O. Box 118, S-221 00 Lund, Sweden,
- defense location
- Rydbergsalen, Fysicum, Professorsgatan 1, Lund University, Faculty of Engineering LTH.
- defense date
- 2018-10-15 13:15:00
- ISBN
- 978-91-7753-848-6
- language
- English
- LU publication?
- yes
- id
- 4acb8c01-2985-45b5-a295-72e9c366efd6
- date added to LUP
- 2018-09-19 13:22:02
- date last changed
- 2019-07-05 09:57:30
@phdthesis{4acb8c01-2985-45b5-a295-72e9c366efd6, abstract = {{Semiconductor nanowires have proven to be promising building blocks for next-generation optoelectronic devices. The nanometric dimensions of nanowires provides strain relaxation capability, thus enabling the heteroepitaxy of III-V materials on silicon, as well as providing the possibility of realizing optoelectronic devices with lattice-mismatched material combinations. The subwavelength dimensions of nanowires and their large surface-to-volume ratio can enable nanowires to enhance optical absorption. The above-mentioned properties make nanowires/nanostructures potential candidates for the realization of efficient and low-cost optoelectronics.<br/><br/>In this work we have fabricated vertical arrays of InP nanowire p-n junctions to quantitatively evaluate the p-doping in nanowires using the capacitance-voltage method, fabricated and characterized vertical arrays of nanowire photovoltaic devices, and photodetectors in InP material system, as well as fabricating and characterizing nanostructured GaN-based light emitting diodes. We have developed a novel characterization method by engineering the p-i-n junctions in InP core-shell nanowires which enabled us to perform a reasonable comparative study of absorption between vertically and laterally oriented nanowire photovoltaic devices, studied the effect of junction position on the performance of InP axial p-i-n photodetectors/solar cells, and realized nanostructured (Al)(In)GaN UV, blue, green and red light emitting diodes enabled by junction placement on the c crystal plane.}}, author = {{Nowzari, Ali}}, isbn = {{978-91-7753-848-6}}, keywords = {{Nanowire, Solar cell, Photodetector, Light Emitting Diode, Doping Evaluation; Fysicumarkivet A:2018:Nowzari}}, language = {{eng}}, month = {{09}}, publisher = {{Division of Solid State Physics, Lund University, P.O. Box 118, S-221 00 Lund, Sweden,}}, school = {{Lund University}}, title = {{Junction Engineering in Nanostructured Optoelectronic Devices}}, year = {{2018}}, }