Modeling the morphology of self-assisted GaP nanowires grown by molecular beam epitaxy
(2018) 2018 International Conference Laser Optics, ICLO 2018 p.381-381- Abstract
The morphologies of self-assisted GaP nanowires grown by gas source MBE in regular arrays on silicon substrates are modeled by a kinetic equation for the nanowire radius versus the position along the nanowire axis. The most important growth parameter that governs the nanowire morphology is the V/III flux ratio. Sharpened nanowires with a stable radius equal to only 12 nm at a V/III flux ratio of 6 are achieved, demonstrating their suitability for the insertion of quantum dots.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/50f7e77d-9b6b-4760-8682-64872898df78
- author
- Leshchenko, E. D. LU ; Kuyanov, P. ; La Pierre, R. R. and Dubrovskii, V. G.
- organization
- publishing date
- 2018-08
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- host publication
- Proceedings - International Conference Laser Optics 2018, ICLO 2018
- article number
- 8435415
- pages
- 1 pages
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- conference name
- 2018 International Conference Laser Optics, ICLO 2018
- conference location
- St. Petersburg, Russian Federation
- conference dates
- 2018-06-04 - 2018-06-08
- external identifiers
-
- scopus:85052537264
- ISBN
- 9781538636121
- DOI
- 10.1109/LO.2018.8435415
- language
- English
- LU publication?
- yes
- id
- 50f7e77d-9b6b-4760-8682-64872898df78
- date added to LUP
- 2022-04-01 15:40:55
- date last changed
- 2022-04-01 17:00:33
@inproceedings{50f7e77d-9b6b-4760-8682-64872898df78, abstract = {{<p>The morphologies of self-assisted GaP nanowires grown by gas source MBE in regular arrays on silicon substrates are modeled by a kinetic equation for the nanowire radius versus the position along the nanowire axis. The most important growth parameter that governs the nanowire morphology is the V/III flux ratio. Sharpened nanowires with a stable radius equal to only 12 nm at a V/III flux ratio of 6 are achieved, demonstrating their suitability for the insertion of quantum dots.</p>}}, author = {{Leshchenko, E. D. and Kuyanov, P. and La Pierre, R. R. and Dubrovskii, V. G.}}, booktitle = {{Proceedings - International Conference Laser Optics 2018, ICLO 2018}}, isbn = {{9781538636121}}, language = {{eng}}, pages = {{381--381}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, title = {{Modeling the morphology of self-assisted GaP nanowires grown by molecular beam epitaxy}}, url = {{http://dx.doi.org/10.1109/LO.2018.8435415}}, doi = {{10.1109/LO.2018.8435415}}, year = {{2018}}, }