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High-throughput spectroscopy of semiconductor nanowires in the presence of inhomogeneity

Manchester, The Univ. ; Sivakumar, Sudhakar LU ; Magnusson, Martin LU and Parkinson, Patrick (2021) Low-Dimensional Materials and Devices 2021 p.20-20
Abstract
Controllable doping in semiconductor nanowires is essential for development of optoelectronic devices. Despite great progress, a fundamental challenge remains in controlling the uniformity of doping, particularly in the presence of relatively high levels of geometrical inhomogeneity in bottom-up growth. A relatively high doping level of 1E18 cm-3 corresponds to just ~1000 activated dopants in a 2µm long, 50nm diameter nanowire. High-throughput photoluminescence spectroscopy enables the collection of doping distributions across many (>10k) nanowires, but geometric variation adds additional uncertainty to the modelling. We present an approach that uses large datasets of doping and emission intensity to infer both doping and diameter... (More)
Controllable doping in semiconductor nanowires is essential for development of optoelectronic devices. Despite great progress, a fundamental challenge remains in controlling the uniformity of doping, particularly in the presence of relatively high levels of geometrical inhomogeneity in bottom-up growth. A relatively high doping level of 1E18 cm-3 corresponds to just ~1000 activated dopants in a 2µm long, 50nm diameter nanowire. High-throughput photoluminescence spectroscopy enables the collection of doping distributions across many (>10k) nanowires, but geometric variation adds additional uncertainty to the modelling. We present an approach that uses large datasets of doping and emission intensity to infer both doping and diameter across a growth, and apply Bayesian methods to study the underlying distributions in Zn-doped aerotaxy-grown GaAs nanowires. This new big-data enabled approach provides a route to exploit inherent inhomogeneity to reveal fundamental recombination mechanisms. (Less)
Please use this url to cite or link to this publication:
author
; ; and
organization
publishing date
type
Contribution to conference
publication status
published
subject
pages
20 - 20
conference name
Low-Dimensional Materials and Devices 2021
conference dates
2021-08-01 - 2021-08-05
DOI
10.1117/12.2596583
language
English
LU publication?
yes
id
58e17cfe-a53e-4952-81b7-53e925583755
alternative location
https://www.spiedigitallibrary.org/conference-proceedings-of-spie/11800/2596583/High-throughput-spectroscopy-of-semiconductor-nanowires-in-the-presence-of/10.1117/12.2596583.full
date added to LUP
2022-05-11 11:43:54
date last changed
2022-05-12 09:40:23
@misc{58e17cfe-a53e-4952-81b7-53e925583755,
  abstract     = {{Controllable doping in semiconductor nanowires is essential for development of optoelectronic devices. Despite great progress, a fundamental challenge remains in controlling the uniformity of doping, particularly in the presence of relatively high levels of geometrical inhomogeneity in bottom-up growth. A relatively high doping level of 1E18 cm-3 corresponds to just ~1000 activated dopants in a 2µm long, 50nm diameter nanowire. High-throughput photoluminescence spectroscopy enables the collection of doping distributions across many (>10k) nanowires, but geometric variation adds additional uncertainty to the modelling. We present an approach that uses large datasets of doping and emission intensity to infer both doping and diameter across a growth, and apply Bayesian methods to study the underlying distributions in Zn-doped aerotaxy-grown GaAs nanowires. This new big-data enabled approach provides a route to exploit inherent inhomogeneity to reveal fundamental recombination mechanisms.}},
  author       = {{Manchester, The Univ. and Sivakumar, Sudhakar and Magnusson, Martin and Parkinson, Patrick}},
  language     = {{eng}},
  month        = {{08}},
  pages        = {{20--20}},
  title        = {{High-throughput spectroscopy of semiconductor nanowires in the presence of inhomogeneity}},
  url          = {{http://dx.doi.org/10.1117/12.2596583}},
  doi          = {{10.1117/12.2596583}},
  year         = {{2021}},
}