Nanoimprint in mr-L 6000.1 XP/PMMA resist system
(2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)- Abstract
- Use of the new resist system mr-L 6000.1 XP in combination with PMMA is demonstrated to give sub-100 nm resolution in nanoimprint lithography. Low glass transition temperature in combination with high plasma stability makes this resist suitable for achieving desirable resist profiles after the imprint process. Imprint conditions for mr-L 6000.1 XP/PMMA resist system as well as imprint results are described and discussed
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/610475
- author
- Carlberg, Patrick LU ; Beck, Marc LU ; Graczyk, Mariusz LU ; Maximov, Ivan LU ; Sarwe, Eva-Lena LU ; Montelius, Lars LU ; Pfeiffer, K. ; Reuther, F. and Gruetzner, G.
- organization
- publishing date
- 2002
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- resist profiles, plasma stability, glass transition temperature, nanoimprint lithography, XP/PMMA resist system, 100 nm, SEM, scanning electron microscopy
- host publication
- 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science
- pages
- 2 pages
- publisher
- Lund University
- conference name
- Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
- conference location
- Malmö, Sweden
- conference dates
- 2002-06-24 - 2002-06-28
- language
- English
- LU publication?
- yes
- id
- e26b4275-cabf-4469-aa20-33bda7fad2a3 (old id 610475)
- date added to LUP
- 2016-04-04 11:30:08
- date last changed
- 2018-11-21 21:05:14
@inproceedings{e26b4275-cabf-4469-aa20-33bda7fad2a3, abstract = {{Use of the new resist system mr-L 6000.1 XP in combination with PMMA is demonstrated to give sub-100 nm resolution in nanoimprint lithography. Low glass transition temperature in combination with high plasma stability makes this resist suitable for achieving desirable resist profiles after the imprint process. Imprint conditions for mr-L 6000.1 XP/PMMA resist system as well as imprint results are described and discussed}}, author = {{Carlberg, Patrick and Beck, Marc and Graczyk, Mariusz and Maximov, Ivan and Sarwe, Eva-Lena and Montelius, Lars and Pfeiffer, K. and Reuther, F. and Gruetzner, G.}}, booktitle = {{7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science}}, keywords = {{resist profiles; plasma stability; glass transition temperature; nanoimprint lithography; XP/PMMA resist system; 100 nm; SEM; scanning electron microscopy}}, language = {{eng}}, publisher = {{Lund University}}, title = {{Nanoimprint in mr-L 6000.1 XP/PMMA resist system}}, year = {{2002}}, }