Anisotropic-Strain-Induced Band Gap Engineering in Nanowire-Based Quantum Dots
(2018) In Nano Letters 18(4). p.2393-2401- Abstract
Tuning light emission in bulk and quantum structures by strain constitutes a complementary method to engineer functional properties of semiconductors. Here, we demonstrate the tuning of light emission of GaAs nanowires and their quantum dots up to 115 meV by applying strain through an oxide envelope. We prove that the strain is highly anisotropic and clearly results in a component along the NW longitudinal axis, showing good agreement with the equations of uniaxial stress. We further demonstrate that the strain strongly depends on the oxide thickness, the oxide intrinsic strain, and the oxide microstructure. We also show that ensemble measurements are fully consistent with characterizations at the single-NW level, further elucidating... (More)
Tuning light emission in bulk and quantum structures by strain constitutes a complementary method to engineer functional properties of semiconductors. Here, we demonstrate the tuning of light emission of GaAs nanowires and their quantum dots up to 115 meV by applying strain through an oxide envelope. We prove that the strain is highly anisotropic and clearly results in a component along the NW longitudinal axis, showing good agreement with the equations of uniaxial stress. We further demonstrate that the strain strongly depends on the oxide thickness, the oxide intrinsic strain, and the oxide microstructure. We also show that ensemble measurements are fully consistent with characterizations at the single-NW level, further elucidating the general character of the findings. This work provides the basic elements for strain-induced band gap engineering and opens new avenues in applications where a band-edge shift is necessary.
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- author
- Francaviglia, Luca ; Giunto, Andrea ; Kim, Wonjong ; Romero-Gomez, Pablo ; Vukajlovic-Plestina, Jelena ; Friedl, Martin ; Potts, Heidi LU ; Güniat, Lucas ; Tütüncüoglu, Gözde and Fontcuberta I Morral, Anna
- publishing date
- 2018-04-11
- type
- Contribution to journal
- publication status
- published
- in
- Nano Letters
- volume
- 18
- issue
- 4
- pages
- 9 pages
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- pmid:29578722
- scopus:85045218457
- ISSN
- 1530-6992
- DOI
- 10.1021/acs.nanolett.7b05402
- language
- English
- LU publication?
- no
- id
- 640df55f-c4b8-47b3-85b2-ed6a0f0eb00c
- date added to LUP
- 2019-05-15 09:51:43
- date last changed
- 2024-04-16 05:37:56
@article{640df55f-c4b8-47b3-85b2-ed6a0f0eb00c,
abstract = {{<p>Tuning light emission in bulk and quantum structures by strain constitutes a complementary method to engineer functional properties of semiconductors. Here, we demonstrate the tuning of light emission of GaAs nanowires and their quantum dots up to 115 meV by applying strain through an oxide envelope. We prove that the strain is highly anisotropic and clearly results in a component along the NW longitudinal axis, showing good agreement with the equations of uniaxial stress. We further demonstrate that the strain strongly depends on the oxide thickness, the oxide intrinsic strain, and the oxide microstructure. We also show that ensemble measurements are fully consistent with characterizations at the single-NW level, further elucidating the general character of the findings. This work provides the basic elements for strain-induced band gap engineering and opens new avenues in applications where a band-edge shift is necessary.</p>}},
author = {{Francaviglia, Luca and Giunto, Andrea and Kim, Wonjong and Romero-Gomez, Pablo and Vukajlovic-Plestina, Jelena and Friedl, Martin and Potts, Heidi and Güniat, Lucas and Tütüncüoglu, Gözde and Fontcuberta I Morral, Anna}},
issn = {{1530-6992}},
language = {{eng}},
month = {{04}},
number = {{4}},
pages = {{2393--2401}},
publisher = {{The American Chemical Society (ACS)}},
series = {{Nano Letters}},
title = {{Anisotropic-Strain-Induced Band Gap Engineering in Nanowire-Based Quantum Dots}},
url = {{http://dx.doi.org/10.1021/acs.nanolett.7b05402}},
doi = {{10.1021/acs.nanolett.7b05402}},
volume = {{18}},
year = {{2018}},
}