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High-Mobility Epitaxial Graphene on Ge/Si(100) Substrates

Aprojanz, J. ; Rosenzweig, Ph ; Nguyen, T. T.Nhung ; Karakachian, H. ; Küster, K. ; Starke, U. ; Lukosius, M. ; Lippert, G. ; Sinterhauf, A. and Wenderoth, M. , et al. (2020) In ACS applied materials & interfaces 12(38). p.43065-43072
Abstract

Graphene was shown to reveal intriguing properties of its relativistic two-dimensional electron gas; however, its implementation to microelectronic applications is missing to date. In this work, we present a comprehensive study of epitaxial graphene on technologically relevant and in a standard CMOS process achievable Ge(100) epilayers grown on Si(100) substrates. Crystalline graphene monolayer structures were grown by means of chemical vapor deposition (CVD). Using angle-resolved photoemission spectroscopy and in situ surface transport measurements, we demonstrate their metallic character both in momentum and real space. Despite numerous crystalline imperfections, e.g., grain boundaries and strong corrugation, as compared to epitaxial... (More)

Graphene was shown to reveal intriguing properties of its relativistic two-dimensional electron gas; however, its implementation to microelectronic applications is missing to date. In this work, we present a comprehensive study of epitaxial graphene on technologically relevant and in a standard CMOS process achievable Ge(100) epilayers grown on Si(100) substrates. Crystalline graphene monolayer structures were grown by means of chemical vapor deposition (CVD). Using angle-resolved photoemission spectroscopy and in situ surface transport measurements, we demonstrate their metallic character both in momentum and real space. Despite numerous crystalline imperfections, e.g., grain boundaries and strong corrugation, as compared to epitaxial graphene on SiC(0001), charge carrier mobilities of 1 × 104 cm2/Vs were obtained at room temperature, which is a result of the quasi-charge neutrality within the graphene monolayers on germanium and not dependent on the presence of an interface oxide. The interface roughness due to the facet structure of the Ge(100) epilayer, formed during the CVD growth of graphene, can be reduced via subsequent in situ annealing up to 850 °C coming along with an increase in the mobility by 30%. The formation of a Ge(100)-(2 × 1) structure demonstrates the weak interaction and effective delamination of graphene from the Ge/Si(100) substrate.

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organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
charge carrier mobilities, epitaxial graphene, Ge epilayers, LEED, photoemission, Si(100), STM, surface transport
in
ACS applied materials & interfaces
volume
12
issue
38
pages
8 pages
publisher
The American Chemical Society (ACS)
external identifiers
  • pmid:32865383
  • scopus:85091575377
ISSN
1944-8244
DOI
10.1021/acsami.0c10725
language
English
LU publication?
yes
id
67e1429d-4bcf-48cd-a942-d78ef1d4894c
date added to LUP
2020-10-23 15:41:04
date last changed
2024-05-15 19:23:36
@article{67e1429d-4bcf-48cd-a942-d78ef1d4894c,
  abstract     = {{<p>Graphene was shown to reveal intriguing properties of its relativistic two-dimensional electron gas; however, its implementation to microelectronic applications is missing to date. In this work, we present a comprehensive study of epitaxial graphene on technologically relevant and in a standard CMOS process achievable Ge(100) epilayers grown on Si(100) substrates. Crystalline graphene monolayer structures were grown by means of chemical vapor deposition (CVD). Using angle-resolved photoemission spectroscopy and in situ surface transport measurements, we demonstrate their metallic character both in momentum and real space. Despite numerous crystalline imperfections, e.g., grain boundaries and strong corrugation, as compared to epitaxial graphene on SiC(0001), charge carrier mobilities of 1 × 104 cm2/Vs were obtained at room temperature, which is a result of the quasi-charge neutrality within the graphene monolayers on germanium and not dependent on the presence of an interface oxide. The interface roughness due to the facet structure of the Ge(100) epilayer, formed during the CVD growth of graphene, can be reduced via subsequent in situ annealing up to 850 °C coming along with an increase in the mobility by 30%. The formation of a Ge(100)-(2 × 1) structure demonstrates the weak interaction and effective delamination of graphene from the Ge/Si(100) substrate.</p>}},
  author       = {{Aprojanz, J. and Rosenzweig, Ph and Nguyen, T. T.Nhung and Karakachian, H. and Küster, K. and Starke, U. and Lukosius, M. and Lippert, G. and Sinterhauf, A. and Wenderoth, M. and Zakharov, A. A. and Tegenkamp, C.}},
  issn         = {{1944-8244}},
  keywords     = {{charge carrier mobilities; epitaxial graphene; Ge epilayers; LEED; photoemission; Si(100); STM; surface transport}},
  language     = {{eng}},
  number       = {{38}},
  pages        = {{43065--43072}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{ACS applied materials & interfaces}},
  title        = {{High-Mobility Epitaxial Graphene on Ge/Si(100) Substrates}},
  url          = {{http://dx.doi.org/10.1021/acsami.0c10725}},
  doi          = {{10.1021/acsami.0c10725}},
  volume       = {{12}},
  year         = {{2020}},
}