Effects of aluminum on epitaxial graphene grown on C-face SiC
(2015) In Applied Physics Reviews 117(19).- Abstract
- The effects of Al layers deposited on graphene grown on C-face SiC substrates are investigated before and after subsequent annealing using low energy electron diffraction (LEED), photoelectron spectroscopy, and angle resolved photoemission. As-deposited layers appear inert. Annealing at a temperature of about 400 degrees C initiates migration of Al through the graphene into the graphene/SiC interface. Further annealing at temperatures from 500 degrees C to 700 degrees C induces formation of an ordered compound, producing a two domain root 7 x root 7R19 degrees LEED pattern and significant changes in the core level spectra that suggest formation of an Al-Si-C compound. Decomposition of this compound starts after annealing at 800 degrees C,... (More)
- The effects of Al layers deposited on graphene grown on C-face SiC substrates are investigated before and after subsequent annealing using low energy electron diffraction (LEED), photoelectron spectroscopy, and angle resolved photoemission. As-deposited layers appear inert. Annealing at a temperature of about 400 degrees C initiates migration of Al through the graphene into the graphene/SiC interface. Further annealing at temperatures from 500 degrees C to 700 degrees C induces formation of an ordered compound, producing a two domain root 7 x root 7R19 degrees LEED pattern and significant changes in the core level spectra that suggest formation of an Al-Si-C compound. Decomposition of this compound starts after annealing at 800 degrees C, and at 1000 degrees C, Al is no longer possible to detect at the surface. On Si-face graphene, deposited Al layers did not form such an Al-Si-C compound, and Al was still detectable after annealing above 1000 degrees C. (C) 2015 Author(s). (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/7411674
- author
- Xia, Chao ; Johansson, Leif I. ; Niu, Yuran LU ; Hultman, Lars and Virojanadara, Chariya
- organization
- publishing date
- 2015
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Reviews
- volume
- 117
- issue
- 19
- article number
- 195306
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000355005600036
- scopus:84929631173
- ISSN
- 1931-9401
- DOI
- 10.1063/1.4921462
- language
- English
- LU publication?
- yes
- id
- 7425d279-a361-4936-ace9-17a4fe987a13 (old id 7411674)
- date added to LUP
- 2016-04-01 10:15:15
- date last changed
- 2022-01-25 21:22:34
@article{7425d279-a361-4936-ace9-17a4fe987a13, abstract = {{The effects of Al layers deposited on graphene grown on C-face SiC substrates are investigated before and after subsequent annealing using low energy electron diffraction (LEED), photoelectron spectroscopy, and angle resolved photoemission. As-deposited layers appear inert. Annealing at a temperature of about 400 degrees C initiates migration of Al through the graphene into the graphene/SiC interface. Further annealing at temperatures from 500 degrees C to 700 degrees C induces formation of an ordered compound, producing a two domain root 7 x root 7R19 degrees LEED pattern and significant changes in the core level spectra that suggest formation of an Al-Si-C compound. Decomposition of this compound starts after annealing at 800 degrees C, and at 1000 degrees C, Al is no longer possible to detect at the surface. On Si-face graphene, deposited Al layers did not form such an Al-Si-C compound, and Al was still detectable after annealing above 1000 degrees C. (C) 2015 Author(s).}}, author = {{Xia, Chao and Johansson, Leif I. and Niu, Yuran and Hultman, Lars and Virojanadara, Chariya}}, issn = {{1931-9401}}, language = {{eng}}, number = {{19}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Applied Physics Reviews}}, title = {{Effects of aluminum on epitaxial graphene grown on C-face SiC}}, url = {{http://dx.doi.org/10.1063/1.4921462}}, doi = {{10.1063/1.4921462}}, volume = {{117}}, year = {{2015}}, }